Quantum dot optoelectronic devices: lasers, photodetectors and solar cells
Nanometre-scale semiconductor devices have been envisioned as next-generation
technologies with high integration and functionality. Quantum dots, or the so-called'artificial …
technologies with high integration and functionality. Quantum dots, or the so-called'artificial …
Progress in infrared photodetectors since 2000
C Downs, TE Vandervelde - Sensors, 2013 - mdpi.com
The first decade of the 21st-century has seen a rapid development in infrared photodetector
technology. At the end of the last millennium there were two dominant IR systems, InSb-and …
technology. At the end of the last millennium there were two dominant IR systems, InSb-and …
A review of advances in thermophotovoltaics for power generation and waste heat harvesting
A Licht, N Pfiester, D DeMeo, J Chivers… - MRS …, 2019 - cambridge.org
The vast majority of power generation in the United States today is produced through the
same processes as it was in the late-1800s: heat is applied to water to generate steam …
same processes as it was in the late-1800s: heat is applied to water to generate steam …
Demonstration of InAs/InGaAs/GaAs quantum dots-in-a-well mid-wave infrared photodetectors grown on silicon substrate
In this paper, we have demonstrated the first InAs/InGaAs/GaAs quantum dots-in-a-well
(DWELL) photodetector monolithically grown on silicon substrate. We studied both the …
(DWELL) photodetector monolithically grown on silicon substrate. We studied both the …
Confinement enhancing barriers for high performance quantum dots-in-a-well infrared detectors
We demonstrate the use of thin AlGaAs barrier layers in the quantum dots in a well
heterostructure to enhance the quantum confinement of carriers in the excited energy level …
heterostructure to enhance the quantum confinement of carriers in the excited energy level …
GaSb thermophotovoltaic cells grown on GaAs substrate using the interfacial misfit array method
D DeMeo, C Shemelya, C Downs, A Licht… - Journal of electronic …, 2014 - Springer
We present gallium antimonide (GaSb) p–i–n photodiodes for use as thermophotovoltaic
(TPV) cells grown on gallium arsenide (100) substrates using the interfacial misfit array …
(TPV) cells grown on gallium arsenide (100) substrates using the interfacial misfit array …
Design and characterization of colloidal quantum dot photoconductors for multi-color mid-infrared detection
This report paves the way for low cost, multi-color, room-temperature, and easily-feasible
mid-IR photodetector with distinct output currents. The proposed device is designed and …
mid-IR photodetector with distinct output currents. The proposed device is designed and …
Temperature-dependent modulated reflectance of InAs/InGaAs/GaAs quantum dots-in-a-well infrared photodetectors
R Nedzinskas, B Čechavičius, A Rimkus… - Journal of Applied …, 2015 - pubs.aip.org
We present a photoreflectance (PR) study of multi-layer InAs quantum dot (QD)
photodetector structures, incorporating InGaAs overgrown layers and positioned …
photodetector structures, incorporating InGaAs overgrown layers and positioned …
Quantum dot infrared photodetector enhanced by avalanche multiplication
A novel intersubband quantum dot photodetector is proposed and theoretically investigated.
The presented device is based on the integration of a multiplication layer with a quantum dot …
The presented device is based on the integration of a multiplication layer with a quantum dot …
Carrier transport and recombination dynamics of InAs/GaAs sub-monolayer quantum dot near infrared photodetector
Here, we present a relative study of tunnel-induced photocarrier escape processes in a
laterally coupled InAs sub-monolayer quantum dot-based photodetector (SML QD-PD) as a …
laterally coupled InAs sub-monolayer quantum dot-based photodetector (SML QD-PD) as a …