The inductively coupled plasma reactive ion etching (ICP-RIE) is a selective dry etching
method used in fabrication technology of various semiconductor devices. The etching is …

During the past few decades, silicon carbide (SiC) has emerged as the most promising wide-
bandgap semiconductor for high-temperature, high-frequency, and high-power applications …

Silicon carbide (SiC) is a promising candidate in high-temperature, high-frequency and high-
power applications due to its outstanding properties such as wide band gap, high critical …

Highly efficient polytype 4H silicon carbide (4H-SiC) p–n diodes for ultraviolet (UV) light
detection have been fabricated, characterized, and exposed to high-intensity mercury lamp …

As an emerging member of the semiconductor family, the third-generation semiconductor
SiC has physical properties such as a wide bandgap, high critical field strength, and high …

High-temperature stability of the Nb/Ni and Ni/Nb Ohmic contacts to n-type 4H-SiC was
investigated and compared after being aged at 400° C for 100 h in N 2 ambient. The …

High-temperature stability of the tungsten/tantalum carbide/silicon carbide (W/TaC/SiC)
system was examined and compared to the tungsten/silicon carbide (W/SiC) system …

The degradation produced by high current density stressing of a contact to p-SiC consisting
of an Al-bearing ohmic contact, a TiW diffusion barrier, and a thick Au overlayer was studied …

Niobium was deposited as an electrode material on an n-type SiC wafer for power device
application. The reaction microstructure and electrical contact property were investigated …

The atomic structure, interfacial charge distribution, bonding nature, and interfacial
electronic states of a 4H–SiC/TiN interface are systematically investigated to understand the …