Diffusion in silicon of elements from columns III and V of the Periodic Table is reviewed in
theory and experiment. The emphasis is on the interactions of these substitutional dopants …

Aluminum as the fastest diffusing acceptor dopant in silicon is commonly used for the
fabrication of power semiconductors with p–n junction depths ranging from some microns to …

We have attempted to establish a unified theory of SiC oxidation by reproducing all the SiC
oxide growth rates on the (0 0 0 1) Si-face,(1 1$\bar {2} $0) a-face and (0 0 0$\bar {1} $) C …

In this paper, we consider how oxidation in dry O2 influences the point‐defect densities in
silicon. By using relationships based on the continuity equations in the oxide and applying a …

PEPPER is a computer program that simulates in one dimension the ion implantation,
diffusion, oxidation, epitaxy, deposition, and etch processes used in VLSI technology. The …

The effect of stress in silicon nitride films on boron diffusion of silicon has been studied.
During annealing in nitrogen, the degree of the retardation in boron diffusion becomes …

High-resolution O 1s and Si 2p photoelectron spectroscopy using synchrotron radiation was
employed to clarify a layer-by-layer oxidation reaction mechanism on a Si (001) surface from …

The silicon wafer bonding technique of silicon implanted with oxygen (SIMOX) wafers is
used to investigate the silicon interstitial reactions with a thin thermal oxide layer formed on …

The diffusivity of phosphorus is measured in silicon with nearly uniform arsenic or boron
background doping (0.1n/ni 30) at temperatures of 915, 1015, and 1105 C. It is found that …

Using the first-principles calculation, the diffusion path is explored in the Si emission from
the interface into the Si oxide surface during the Si oxidation process, by assuming that the …