High-voltage 4H-SiC power MOSFETs with Boron-doped gate oxide
A new process technology for 4H-SiC planar power MOSFETs based on a boron diffusion
step to improve the SiO 2/silicon carbide interface quality is presented in this paper. Large …
step to improve the SiO 2/silicon carbide interface quality is presented in this paper. Large …
Electrical performances and reliability of commercial SiC MOSFETs at high temperature and in SC conditions
B Maxime, O Remy, C Thibault, B Pierre… - 2015 17th European …, 2015 - ieeexplore.ieee.org
Commercial Silicon Carbide have been characterized under various configuration to assess
their maturity and capability to replace their Silicon counterparts in 1.2 kV converter …
their maturity and capability to replace their Silicon counterparts in 1.2 kV converter …
Wide bandgap semiconductors for ultra high voltage devices. Design and characterization aspects
D Planson, P Brosselard, K Isoird… - 2014 International …, 2014 - ieeexplore.ieee.org
The development of high voltage devices is a great challenge. At least, railway and smart
grids are examples of applications requiring high voltage devices. SiC power devices and …
grids are examples of applications requiring high voltage devices. SiC power devices and …
Contribution to the study of the SiC MOSFETs gate oxide
OA Salvadó - 2018 - theses.hal.science
SiC power MOSFETs are called to replace Si IGBT for some medium and high power
applications (hundreds of kVA). However, even if crystallographic defects have been …
applications (hundreds of kVA). However, even if crystallographic defects have been …
Al-implanted on-axis 4H-SiC MOSFETs
M Florentin, M Cabello, J Rebollo… - Semiconductor …, 2017 - iopscience.iop.org
In this paper, the impact of temperature and time stress on gate oxide stability of several
multi-implanted and epitaxied 4H-SiC nMOSFET is presented. The oxide layer was …
multi-implanted and epitaxied 4H-SiC nMOSFET is presented. The oxide layer was …
Planar edge terminations for high voltage 4H-SiC power MOSFETs
Several edge termination structures for high voltage 4H-SiC devices compatible with a
planar power MOSFET fabrication process are analyzed in this paper. The edge …
planar power MOSFET fabrication process are analyzed in this paper. The edge …
Caractérisation et modélisation de diodes Schottky et JBS SiC-4H pour des applications haute tension
B Asllani - 2016 - theses.hal.science
La diode Schottky SiC est un composant qui peut potentiellement remplacer la diode PiN Si
dans les applications de puissance. Effectivement, la tenue en tension élevée, la faible …
dans les applications de puissance. Effectivement, la tenue en tension élevée, la faible …
Towards Very High Voltage SiC Power Devices
The development of high voltage devices is a great challenge. At least, railway and high
voltage distribution network are example of applications requiring high voltage devices. SiC …
voltage distribution network are example of applications requiring high voltage devices. SiC …
Conception, fabrication et caractérisation de transistors à effet de champ haute tension en carbure de silicium et de leur diode associée
F Chevalier - 2012 - theses.hal.science
Dans le contexte des transports plus électriques, les parties mécaniques tendent à être
remplacées par leurs équivalents électriques plus petits. Ainsi, le composant lui-même doit …
remplacées par leurs équivalents électriques plus petits. Ainsi, le composant lui-même doit …
[PDF][PDF] Ανάπτυξη μικρομετρικών τρανζιστορ εγκάρσιου πεδίου από καρβίδιο του πυριτίου (SiC) Development of silicon carbide (SiC) micro vertical transverse field …
ΣΔS DIONYSIOS - 2018 - scholar.archive.org
Περίληψη Η προσομοίωση με μέθοδο πεπερασμένων στοιχείων έχει αναδειχθεί σε κύριο και
σημαντικό εργαλείο που μπορεί να εξηγήσει τη φυσική συμπεριφορά ηλεκτρονικών …
σημαντικό εργαλείο που μπορεί να εξηγήσει τη φυσική συμπεριφορά ηλεκτρονικών …