The present invention discloses an interconnect structure for an integrated circuit formed on
a semiconductor substrate. In one embodiment, the first conductive layer is formed above …

Even when a stiffener is omitted, the semiconductor device which can prevent the
generation of twist and distortion of a wiring Substrate is obtained. As for a semiconductor …

Therefore, the present invention provides a semi conductor device improved So as to
SuppreSS the occurrence of delamination, cracking or the like even when mounting a …

Current trends in microchip fabrication are employing lower dielectric constant (k) materials
in BEOL (back end of the line) processing. Preferably, ultra-low-k materials are employed as …

US8314495B2 - Semiconductor device and method of manufacturing the same - Google
Patents US8314495B2 - Semiconductor device and method of manufacturing the same …

0004 2. Description of the Related Art 0005 Recently, in a package substrate of a
semiconduc tor device, it is required to provide a wiring having higher density. To Satisfy …

Back end of line (BEOL) circuit structures and methods are provided for blocking externally-
originating or internally-originating electromagnetic interference. One such BEOL circuit …

Chamferless via structures and methods of manufacture are provided. The structures include
a conductive line and a set of chamferless wiring vias formed in a dielectric material with at …

A semiconductor memory device includes lower electrodes, each of the lower electrodes
surrounding an inner space, an upper support layer on top surfaces of the lower electrodes …

Even when a stiffener is omitted, the semiconductor device which can prevent the
generation of twist and distortion of a wiring Substrate is obtained. As for a semiconductor …