Ultra-high photoresponse with superiorly sensitive metal-insulator-semiconductor (MIS) structured diodes for UV photodetector application
Here, we fabricated highly sensitive metal-insulator-semiconductor (MIS) type diodes with
positive photo-response by introducing a polycrystalline Ce-WO 3 composite thin films as an …
positive photo-response by introducing a polycrystalline Ce-WO 3 composite thin films as an …
Superior photoresponse MIS Schottky barrier diodes with nanoporous: Sn–WO 3 films for ultraviolet photodetector application
M Raj, C Joseph, M Subramanian… - New Journal of …, 2020 - pubs.rsc.org
A highly ordered nanoporous structure based MIS type photo-detector is a promising device
for next-generation optoelectronic applications due to its excellent light absorption, better …
for next-generation optoelectronic applications due to its excellent light absorption, better …
Temperature dependent current-voltage characteristics of Au/n-Si Schottky barrier diodes and the effect of transition metal oxides as an interface layer
S Mahato, J Puigdollers - Physica B: Condensed Matter, 2018 - Elsevier
Temperature dependent current–voltage (I‒V) characteristics of Au/n-type silicon (n-Si)
Schottky barrier diodes have been investigated. Three transition metal oxides (TMO) are …
Schottky barrier diodes have been investigated. Three transition metal oxides (TMO) are …
On temperature-dependent experimental IV and CV data of Ni/n-GaN Schottky contacts
We report the current-voltage (IV) and capacitance-voltage characteristics (CV) of Ni/n-GaN
Schottky diodes. Gallium nitride is a highly promising wide band gap semiconductor for …
Schottky diodes. Gallium nitride is a highly promising wide band gap semiconductor for …
[HTML][HTML] Analysis of temperature dependent current-voltage and capacitance-voltage characteristics of an Au/V2O5/n-Si Schottky diode
Electronic properties of Au/V 2 O 5/n-Si Schottky device have been investigated by
temperature dependent current–voltage (I–V) and capacitance–voltage (C–V) …
temperature dependent current–voltage (I–V) and capacitance–voltage (C–V) …
The double Gaussian distribution of barrier heights in Al/TiO2/p-Si (metal-insulator-semiconductor) structures at low temperatures
O Pakma, N Serin, T Serin, Ş Altındal - Journal of Applied Physics, 2008 - pubs.aip.org
The current-voltage (IV) characteristics of Al/TiO 2/p-Si metal-insulator-semiconductor (MIS)
structures have been investigated in the temperature range of 80–300 K. An abnormal …
structures have been investigated in the temperature range of 80–300 K. An abnormal …
Augmented photovoltaic performance of Cu/Ce-(Sn: Cd)/n-Si Schottky barrier diode utilizing dual-doped Ce-(Sn: Cd) thin films
In the current investigation, we are fabricated the Schottky barrier diode (SBDs) formed on
dual doped Ce-(Sn: Cd)(1, 3 and 5 wt%) thin films. The film was prepared by spray pyrolysis …
dual doped Ce-(Sn: Cd)(1, 3 and 5 wt%) thin films. The film was prepared by spray pyrolysis …
Impact of Phase Transformation in WO3 Thin Films at Higher Temperature and its Compelling Interfacial Role in Cu/WO3/p–Si Structured Schottky Barrier Diodes
Inter-connected network grains of tungsten trioxide (WO3) thin films were deposited on glass
using a jet nebulizer spray pyrolysis (JNSP) technique by varying the substrate temperature …
using a jet nebulizer spray pyrolysis (JNSP) technique by varying the substrate temperature …
Electrical characterization of (Ni/Au)/Al0. 25Ga0. 75N/GaN/SiC Schottky barrier diode
S Saadaoui, M Mongi Ben Salem… - Journal of Applied …, 2011 - pubs.aip.org
In this work we report on the characteristics of a (Ni/Au)/AlGaN/GaN/SiC Schottky barrier
diode (SBD). A variety of electrical techniques, such as gate current-voltage (IV) …
diode (SBD). A variety of electrical techniques, such as gate current-voltage (IV) …
Thermal sensing capability and current–voltage–temperature characteristics in Pt/n-GaP/Al/Ti Schottky diodes
H Efeoǧlu, A Turut - Journal of Vacuum Science & Technology B, 2023 - pubs.aip.org
We have discussed the thermal sensing capability under a constant current level and current
versus voltage (I–V) traces by measuring the temperature of high series resistance Pt/n …
versus voltage (I–V) traces by measuring the temperature of high series resistance Pt/n …