Abstract Two-dimensional (2D) materials have been extensively studied in recent years due
to their unique properties and great potential for applications. Different types of structural …

Silicon crystallized in the usual cubic (diamond) lattice structure has dominated the
electronics industry for more than half a century. However, cubic silicon (Si), germanium …

Within the last two decades, vertical-external-cavity surface-emitting lasers (VECSELs) have
attracted rising interest from both industry and science. They have proven to be versatile …

Improving the photo-induced charge transfer (PICT) efficiency is the key factor for boosting
the surface-enhanced Raman scattering (SERS) performance of semiconductor …

The electrical performance of two-dimensional transition metal dichalcogenides (TMDs) is
strongly affected by the number of structural defects. In this work, we provide an optical …

Large energy shifts in the luminescence emission from strained InGaAs quantum dots are
observed as a result of postgrowth annealing and also when raising the upper cladding …

We report time-resolved photoluminescence measurements as a function of temperature for
InAs quantum dots grown by molecular-beam epitaxy on GaAs (100). As the temperature is …

We have investigated the exciton kinetics in self‐assembled InAs quantum dots and ultrathin
quantum wells grown by molecular beam epitaxy on (001) oriented GaAs substrates. At low …

In a carefully selected set of strained In x Ga 1− x As/GaAs quantum-well structures, we have
studied experimentally and theoretically the competition between carrier collection from the …

In this report, we investigate the thermal relaxation of the photoluminescence (PL) in
InAs/GaAs quantum dot superlattices with large thicknesses that have two to more than three …