Intrinsic variability observed in resistive-switching devices (cycle-to-cycle and device-to-
device) is widely recognised as a major hurdle for widespread adoption of Resistive RAM …

ReRAM technologies feature desired properties, eg fast switching and high read margin,
that make them attractive candidates to be used in non-volatile flip-flops (NVFFs). However …

We describe a bipolar memristor in the Verilog-A language. The proposed model concepts
take into account the following parameter deviations in the memristor switching between …

Представлено описание биполярного мемристора на языке Verilog-A. Предлагаемые
модельные представления учитывают в процессе переключения мемристора между …

Modeling in an emerging technology like RRAM devices is one of the pivotal concerns for its
development. In the current bibliography, most of the models face difficulties in implementing …

Resistive RAMs or memristors are nowadays considered serious candidates for the
implementation of energy efficient and scalable neuromorphic computing systems. However …

ReRAM-based Non-Volatile Flip-Flops (NVFFs) enable instant hibernation and zero-
leakage sleep modes that are highly desired in energy harvesting and frequently-off Non …

Always-ON accelerators running TinyML applications are strongly limited by the memory
and computation resources available in edge devices. Compute-In-Memory (CIM) …

This paper presents an analytical model of the cycle to cycle (c2c) variability in Pt/Ta 2 O
5/TaO x/Pt RRAM device. The model is developed by considering the dynamic randomness …

Развитие науки и технического прогресса в области создания интеллектуальных
систем в последние годы является предметом общего интереса производителей …