This book has been written for those who study or professionally deal with solid state
physics. It contains modern concepts about the physics of electrons in solids. It is written …

Hopping conduction (HC) of electrons (holes) in insulators has been a subject of
investigation for more than half a century after the first theoretical prediction of electron …

Abstract dc conductivity measurements have been made on uncompensated Si: As in the
concentration range 6.85× 10 18 0 18 R cm− 3 for 0.5< T< 77 K, although three samples …

The conductivity in cermets and in granular films is known to vary as exp [-(To/T) 1/2], but the
existing theories for such a behaviour have been subjected to criticism. A few new possible …

A Hubbard‐band model is used for analyzing the low‐temperature data of Hall‐effect
measurements on weakly compensated n‐GaAs samples with donor concentrations ND less …

We present nuclear spin relaxation measurements in GaAs epilayers using a new pump-
probe technique in all-electrical, lateral spin-valve devices. The measured T 1 times agree …

Transport properties of manganese‐doped InSb crystals with hole concentration close to the
critical concentration Ncr of the metal–insulator transition (MIT) in p‐InSb (Mn) was found to …

Low-temperature measurements of the conductivity, the Hall effect and the
magnetoresistance have been performed on an n-GaAs sample of impurity concentration …

Investigations of anomalous magnetoresistance (mr) in neutron‐transmutation‐doped GaAs
are performed at T= 0.05 to 4.2 K in the vicinity of the metal–insulator transition (MIT) …

We present and discuss the results of measurements of conductivity and secondary electron
emission coefficient of BixGe1− xO2− 0.5 x (where x= 0.13, 0.23, 0.33, 0.47) and BixSi1 …