Semiconductor nanostructures with low dimensionality like quantum dots and quantum
dashes are one of the best attractive and heuristic solutions for achieving high performance …

▪ Abstract Highly strained semiconductors grow epitaxially on mismatched substrates in the
Stranski-Krastanow growth mode, wherein islands are formed after a few monolayers of …

The spectral dependence of the modal gain and linewidth enhancement factor is measured
in an InAs/GaInAs/AlGaAs/GaAs quantum dot (QD) laser and a GaInAs/AlGaAs/GaAs …

Realization of fully integrated silicon photonics has been handicapped by the lack of a
reliable and efficient III-V light source on Si. Specifically, electrically pumped continuous …

The advances in lasers, electronic and photonic integrated circuits (EPIC), optical
interconnects as well as the modulation techniques allow the present day society to …

Owing to their high integration and functionality, nanometer-scale optoelectronic devices
based on III-V semiconductor materials are emerging as an enabling technology for fiber …

Self-organized InAs quantum-dot (QD) lasers emitting at 1.5 μm were grown by gas source
molecular beam epitaxy on (100) InP substrates. Room temperature continuous-wave (CW) …

We show how the height dispersion of self-organized InAs/InP (001) quantum islands
emitting at 1.55 μm was reduced by optimizing the epitaxial growth parameters. Low height …

Densely integrated devices on a single chip enable both complex functionality and economy
of scale. With a small footprint, microcavities with self-assembled InAs quantum dashes …

Wavelength conversion based on four-wave mixing (FWM) and cross-gain modulation
(XGM) is experimentally demonstrated for the first time in a 1550-nm InAs-InP quantum-dash …