Structural and optical characterizations of cubic GaN layers grown by MOVPE on GaAs (114) substrate
GaN-based structures have been employed in a range of electronic and optoelectronic
applications. Despite the extensive utilization of hexagonal GaN (h-GaN), certain devices …
applications. Despite the extensive utilization of hexagonal GaN (h-GaN), certain devices …
Effects of the diameter of thermally generated nanopits on carrier dynamics in AlGaN/GaN heterostructures
The size and density of nanopits, generated at the surface of their top layer, strongly affect
the electrical and optical properties of AlGaN-based structures. Therefore, the control of the …
the electrical and optical properties of AlGaN-based structures. Therefore, the control of the …
Effect of thermally generated nanopits diameter on the carrier dynamics in AlGaN/GaN heterostructures
M Bouzidi, W Malek, N Chaaben, AS Alshammari… - 2022 - researchsquare.com
Abstract Effects of the nanopits diameter observed at the surface of AlGaN on carrier
dynamics are systematically investigated. The diameter variation of nanopits is achieved …
dynamics are systematically investigated. The diameter variation of nanopits is achieved …