Nanostructure Fabrication by Area Selective Deposition: A Brief Review

TL Liu, S Bent - Materials Horizons, 2025 - pubs.rsc.org
In recent years, area-selective deposition (ASD) processes have attracted increasing
interest in both academia and industry due to their bottom-up nature, which can simplify …

Advances in Strain‐Induced Noble Metal Nanohybrids for Electro‐Catalysis: From Theoretical Mechanisms to Practical Use

ZY Chen, LT Li, FM Zhao, YH Zhu… - ChemElectroChem, 2024 - Wiley Online Library
In response to the climate goal of achieving carbon neutrality by 2050, efficient
electrochemical energy conversion devices are garnering increasing attention. However, the …

Surface acidity-induced inherently selective atomic layer deposition of tantalum oxide on dielectrics

Y Li, Y Lan, K Cao, J Zhang, Y Wen, B Shan… - Chemistry of …, 2022 - ACS Publications
Selective deposition shows a great perspective for the downscaling of nanoelectronics. In
this work, inherently selective atomic layer deposition (ALD) of tantalum oxide was studied …

Characterizing self-assembled monolayer breakdown in area-selective atomic layer deposition

TL Liu, L Zeng, KL Nardi, DM Hausmann, SF Bent - Langmuir, 2021 - ACS Publications
To enable area-selective atomic layer deposition (AS-ALD), self-assembled monolayers
(SAMs) have been used as the surface inhibitor to block a variety of ALD processes. The …

Mechanisms for undesired nucleation on H-terminated Si and dimethylamino-trimethylsilane passivated SiO2 during TiO2 area-selective atomic layer deposition

RA Nye, SK Song, K Van Dongen, A Delabie… - Applied physics …, 2022 - pubs.aip.org
During TiO 2 atomic layer deposition (ALD) using TiCl 4 and H 2 O at∼ 150 C, nucleation
proceeds rapidly on hydroxylated SiO 2 but is inherently delayed on passivated surfaces …

Enhancing performance and function of polymethacrylate extreme ultraviolet resists using area-selective deposition

RA Nye, K Van Dongen, D De Simone, H Oka… - Chemistry of …, 2023 - ACS Publications
Extreme ultraviolet (EUV) lithography is a critical enabler in next-generation technology,
although the low etch resistance of conventional organic EUV resists results in low …

Understanding Selectivity Loss Mechanisms in Selective Material Deposition by Area Deactivation on 10 nm Cu/SiO2 Patterns

M Pasquali, P Carolan, S Sergeant… - ACS Applied …, 2022 - ACS Publications
Area-selective deposition (ASD), a “bottom-up” substrate-selective material deposition
process, is a promising solution to overcome the current limitations experienced in …

Quantification of area-selective deposition on nanometer-scale patterns using Rutherford backscattering spectrometry

N Claessens, ZZ Khan, NR Haghighi, A Delabie… - Scientific Reports, 2022 - nature.com
We present a site-specific elemental analysis of nano-scale patterns whereby the data
acquisition is based on Rutherford backscattering spectrometry (RBS). The analysis builds …

Systematic Studies into the Area Selectivity of Chemical Vapor Deposition Polymerization

X Zhong, R Jordan, JR Chen, J Raymond… - ACS Applied Materials …, 2023 - ACS Publications
As the current top-down microchip manufacturing processes approach their resolution limits,
there is a need for alternative patterning technologies that offer high feature densities and …

Density functional theory study on the selective capping of cobalt on copper interconnect

K Khumaini, R Hidayat, TR Mayangsari… - Applied Surface …, 2022 - Elsevier
The selective Co capping is essential for improving the electromigration resistance of the
copper interconnects. We studied the mechanism of selective Co deposition using CpCo …