The anisotropic size effect of the electrical resistivity of metal thin films: Tungsten
The resistivity of nanoscale metallic conductors is orientation dependent, even if the bulk
resistivity is isotropic and electron scattering cross-sections are independent of momentum …
resistivity is isotropic and electron scattering cross-sections are independent of momentum …
An expanded benchmarking of beyond-CMOS devices based on Boolean and neuromorphic representative circuits
The latest results of benchmarking research are presented for a variety of beyond-CMOS
charge-and spin-based devices. In addition to improving the device-level models, several …
charge-and spin-based devices. In addition to improving the device-level models, several …
Electron channeling in TiO2 coated Cu layers
Electron transport in metal conductors with∼ 5–30 nm width is dominated by surface
scattering. In situ transport measurements as a function of surface chemistry demonstrate …
scattering. In situ transport measurements as a function of surface chemistry demonstrate …
Finite-size effect in phonon-induced Elliott-Yafet spin relaxation in Al
The Elliott-Yafet theory of spin relaxation in nonmagnetic metals predicts proportionality
between spin and momentum relaxation times for scattering centers such as phonons. Here …
between spin and momentum relaxation times for scattering centers such as phonons. Here …
Circuit simulation of magnetization dynamics and spin transport
P Bonhomme, S Manipatruni, RM Iraei… - … on Electron Devices, 2014 - ieeexplore.ieee.org
In this paper, compact circuit models for spintronic devices have been developed by
manipulating the underlying physical equations. We have simulated, via circuit simulation: 1) …
manipulating the underlying physical equations. We have simulated, via circuit simulation: 1) …
Origin of the magnetic field enhancement of the spin signal in metallic nonlocal spin transport devices
The nonlocal spin valve (NLSV) enables unambiguous study of spin transport, owing to its
ability to isolate pure spin currents. A key principle of NLSV operation is that the “spin signal” …
ability to isolate pure spin currents. A key principle of NLSV operation is that the “spin signal” …
Magnetic impurities as the origin of the variability in spin relaxation rates in Cu-based spin transport devices
The Elliott-Yafet spin relaxation mechanism posits linear proportionality between spin and
momentum lifetimes in low spin-orbit coupling nonmagnetic metals, and is widely accepted …
momentum lifetimes in low spin-orbit coupling nonmagnetic metals, and is widely accepted …
Design and analysis of Si interconnects for all-spin logic
An Si spin interconnect for all-spin logic (ASL) is analyzed by a comprehensive physical
model, including spin injection, spin transport, and stochastic magnetization dynamics. It is …
model, including spin injection, spin transport, and stochastic magnetization dynamics. It is …
Design and analysis of copper and aluminum interconnects for all-spin logic
In this paper, a conventional spin-valve configuration combined with spin-torque-driven
switching is used as an energy efficient interconnect structure for all-spin logic. Both Cu and …
switching is used as an energy efficient interconnect structure for all-spin logic. Both Cu and …
Modeling of spin transport in hybrid magnetic tunnel junctions for magnetic recording applications
D Deb, BK Mahajan - Crystals, 2022 - mdpi.com
We have demonstrated modeling of phonon and defect-induced spin relaxation length (LS)
in Fe 3 O 4 and organic semiconductor (OSC) Alq 3. LS of Alq 3 decreases with enhanced …
in Fe 3 O 4 and organic semiconductor (OSC) Alq 3. LS of Alq 3 decreases with enhanced …