Random telegraph noises in CMOS image sensors caused by variable gate-induced sense node leakage due to X-ray irradiation
CYP Chao, TMH Wu, SF Yeh, KY Chou… - IEEE Journal of the …, 2019 - ieeexplore.ieee.org
The effects of X-ray irradiation on the random noises, especially the random telegraph
noises (RTN), of a 45-nm on 65-nm stacked CMOS image sensor with 8.3 M 1.1 μm pixels …
noises (RTN), of a 45-nm on 65-nm stacked CMOS image sensor with 8.3 M 1.1 μm pixels …