4H-SiC Schottky barrier diodes as radiation detectors: A review
I Capan - Electronics, 2022 - mdpi.com
In this review paper, an overview of the application of n-type 4H-SiC Schottky barrier diodes
(SBDs) as radiation detectors is given. We have chosen 4H-SiC SBDs among other …
(SBDs) as radiation detectors is given. We have chosen 4H-SiC SBDs among other …
Wide-Bandgap Semiconductors for Radiation Detection: A Review
I Capan - Materials, 2024 - mdpi.com
In this paper, an overview of wide-bandgap (WBG) semiconductors for radiation detection
applications is given. The recent advancements in the fabrication of high-quality wafers have …
applications is given. The recent advancements in the fabrication of high-quality wafers have …
Defect characterization and charge transport measurements in high-resolution Ni/n-4H-SiC Schottky barrier radiation detectors fabricated on 250 μm epitaxial layers
Advances in the growth processes of 4H-SiC epitaxial layers have led to the continued
expansion of epilayer thickness, allowing for the detection of more penetrative radioactive …
expansion of epilayer thickness, allowing for the detection of more penetrative radioactive …
Advances in high-resolution radiation detection using 4H-SiC epitaxial layer devices
Advances towards achieving the goal of miniature 4H-SiC based radiation detectors for
harsh environment application have been studied extensively and reviewed in this article …
harsh environment application have been studied extensively and reviewed in this article …
Advances in nuclear detection and readout techniques
R He, XY Niu, Y Wang, HW Liang, HB Liu… - Nuclear Science and …, 2023 - Springer
Abstract “A Craftsman Must Sharpen His Tools to Do His Job,” said Confucius. Nuclear
detection and readout techniques are the foundation of particle physics, nuclear physics …
detection and readout techniques are the foundation of particle physics, nuclear physics …
Radiation detection using fully depleted 50 μm thick Ni/n-4H-SiC epitaxial layer Schottky diodes with ultra-low concentration of Z1/2 and EH6/7 deep defects
SK Chaudhuri, JW Kleppinger… - Journal of Applied Physics, 2020 - pubs.aip.org
Recent advances in the development of thick 4H-SiC epitaxial layers for the fabrication of
surface barrier radiation detectors have been paving the way for their use in highly …
surface barrier radiation detectors have been paving the way for their use in highly …
Analysis of the microscopic characteristics of periodic structure arrays on silicon carbide fabricated by femtosecond laser
R Zhang, C Huang, J Wang, Q Wang, S Feng… - Ceramics …, 2024 - Elsevier
The fabrication of large dimension structures (800 μm× 800 μm) featuring fine and coarse
ripple patterns, nano particle structures, and V-shaped grooves was achieved on silicon …
ripple patterns, nano particle structures, and V-shaped grooves was achieved on silicon …
Radiation detection using n-type 4H-SiC epitaxial layer surface barrier detectors
SK Chaudhuri, KC Mandal - Advanced Materials for Radiation Detection, 2022 - Springer
While CdZnTe (CZT) is one of the best materials for room-temperature radiation detection,
they are not quite suitable for high-temperature or harsh-environment applications. This …
they are not quite suitable for high-temperature or harsh-environment applications. This …
Leakage current conduction, hole injection, and time-dependent dielectric breakdown of n-4H-SiC MOS capacitors during positive bias temperature stress
The conduction mechanism (s) of gate leakage current JG through thermally grown silicon
dioxide (SiO 2) films on the silicon (Si) face of n-type 4H-silicon carbide (4H-SiC) has been …
dioxide (SiO 2) films on the silicon (Si) face of n-type 4H-silicon carbide (4H-SiC) has been …
Effect of Z1/2, EH5, and Ci1 deep defects on the performance of n-type 4H-SiC epitaxial layers Schottky detectors: Alpha spectroscopy and deep level transient …
MA Mannan, SK Chaudhuri, KV Nguyen… - Journal of Applied …, 2014 - pubs.aip.org
Spectroscopic performance of Schottky barrier alpha particle detectors fabricated on 50 μm
thick n-type 4H-SiC epitaxial layers containing Z 1/2, EH 5, and Ci1 deep levels were …
thick n-type 4H-SiC epitaxial layers containing Z 1/2, EH 5, and Ci1 deep levels were …