Dielectric gapfill of high aspect ratio features utilizing a sacrificial etch cap layer
Methods and apparatuses for depositing material into high aspect ratio features, features in
a multi-laminate stack, features having positively sloped sidewalls, features having …
a multi-laminate stack, features having positively sloped sidewalls, features having …
Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process and related semiconductor device structures
2020-11-07 Assigned to ASM IP HOLDING BV reassignment ASM IP HOLDING BV
ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors …
ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors …
Sequential infiltration synthesis apparatus
IJ Raaijmakers, JW Maes, W Knaepen… - US Patent …, 2023 - Google Patents
2017-02-28 Assigned to ASM IP HOLDING BV reassignment ASM IP HOLDING BV
ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors …
ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors …
Thin film forming method
Y Kim, Y Kim - US Patent 12,025,484, 2024 - Google Patents
A thin film forming method includes: a first operation of supplying a source gas at a first flow
rate into a reactor; a second operation of purging the source gas in the reactor to an exhaust …
rate into a reactor; a second operation of purging the source gas in the reactor to an exhaust …
Sequential infiltration synthesis apparatus and a method of forming a patterned structure
JW Maes, W Knaepen, KK Kachel… - US Patent …, 2022 - Google Patents
A sequential infiltration synthesis apparatus comprising: a reaction chamber constructed and
arranged to hold at least a first substrate; a precursor distribution and removal system to …
arranged to hold at least a first substrate; a precursor distribution and removal system to …
Semiconductor processing apparatus and methods for calibrating a semiconductor processing apparatus
S Rajavelu, J Tolle, R McCartney - US Patent 12,040,200, 2024 - Google Patents
A semiconductor processing apparatus is disclosed that may include a reaction chamber
joined by an upstream inlet flange and a downstream outlet flange wherein a longitudinal …
joined by an upstream inlet flange and a downstream outlet flange wherein a longitudinal …
Layer forming method and apparatus
A Klaver, W Knaepen, L Jdira, G Van Der Star… - US Patent …, 2023 - Google Patents
There is provided a method and apparatus for forming a layer, by sequentially repeating a
layer deposition cycle to process a substrate disposed in a reaction chamber. The …
layer deposition cycle to process a substrate disposed in a reaction chamber. The …
Substrate processing apparatus for processing substrates
J Fluit - US Patent 12,040,199, 2024 - Google Patents
The disclosure relates to substrate processing apparatus, with a first and second reactor,
each reactor configured with an elevator to transfer a boat with substrates to the reactor. The …
each reactor configured with an elevator to transfer a boat with substrates to the reactor. The …
Methods for depositing a transition metal nitride film on a substrate by atomic layer deposition and related deposition apparatus
EJ Shero, RB Milligan, WG Petro, E Wang… - US Patent …, 2022 - Google Patents
2022-03-29 Assigned to ASM IP HOLDING BV reassignment ASM IP HOLDING BV
ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors …
ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors …
Substrate processing method and device manufactured by using the same
YK Min - US Patent 11,361,990, 2022 - Google Patents
Provided are a substrate processing method and a device manufactured by using the same,
which may improve etch selectivity of an insulating layer deposited on a stepped structure …
which may improve etch selectivity of an insulating layer deposited on a stepped structure …