[图书][B] Handbook of self assembled semiconductor nanostructures for novel devices in photonics and electronics
M Henini - 2011 - books.google.com
The self-assembled nanostructured materials described in this book offer a number of
advantages over conventional material technologies in a wide range of sectors. World …
advantages over conventional material technologies in a wide range of sectors. World …
Post-growth engineering of InAs/GaAs quantum dots' band-gap using proton implantation and annealing
Proton implantation followed by rapid thermal annealing (RTA) has been employed for the
post-growth tuning of the band gap of molecular beam epitaxy grown InAs/GaAs quantum …
post-growth tuning of the band gap of molecular beam epitaxy grown InAs/GaAs quantum …
Tuning of the electronic properties of self-assembled InAs∕ InP (001) quantum dots using grown-in defect mediated intermixing
C Dion, PJ Poole, S Raymond, P Desjardins… - Applied Physics …, 2006 - pubs.aip.org
This paper examines the influence of rapid thermal annealing on the photoluminescence
spectra of self-assembled In As∕ In P (001) quantum dots capped with 760 nm InP …
spectra of self-assembled In As∕ In P (001) quantum dots capped with 760 nm InP …
Proton implantation-induced intermixing of InAs∕ InP quantum dots
S Barik, HH Tan, C Jagadish - Applied physics letters, 2006 - pubs.aip.org
Proton implantation-induced intermixing of InAs quantum dots (QDs) capped with InP,
GaInAsP, and InP and InGaAs layers grown by metal-organic chemical vapor deposition is …
GaInAsP, and InP and InGaAs layers grown by metal-organic chemical vapor deposition is …
Radiation effects in quantum dot structures
NA Sobolev - … of self assembled semiconductor nanostructures for …, 2008 - Elsevier
Publisher Summary The chapter summarizes the radiation effects in quantum dot (QD)
structures. It defines several radiation effects and their applications to quantum size …
structures. It defines several radiation effects and their applications to quantum size …
High temperature rapid thermal annealing of phosphorous ion implanted InAs∕ InP quantum dots
S Barik, HH Tan, C Jagadish - Applied Physics Letters, 2007 - pubs.aip.org
The effect of high temperature annealing of the In As∕ In P quantum dots (QDs) containing
a thin GaAs interlayer is investigated. The QDs are rapid thermally annealed at 750, 800 …
a thin GaAs interlayer is investigated. The QDs are rapid thermally annealed at 750, 800 …
Drastic ion-implantation-induced inter-mixing during the annealing of self-assembled InAs/InP (001) quantum dots
C Dion, P Desjardins, M Chicoine… - …, 2006 - iopscience.iop.org
This work examines the influence of post-growth phosphorus implantation followed by rapid
thermal annealing on the photoluminescence (PL) emission from self-assembled InAs/InP …
thermal annealing on the photoluminescence (PL) emission from self-assembled InAs/InP …
Carriers' localization and thermal redistribution in post growth voluntarily tuned quantum dashes' size/composition distribution
This paper treats the impact of post growth tuned InAs/InP quantum dashes'(QDas)
size/composition distribution on carriers' localization and thermal redistribution. The spread …
size/composition distribution on carriers' localization and thermal redistribution. The spread …
Impact of ion-implantation-induced band gap engineering on the temperature-dependent photoluminescence properties of InAs/InP quantum dashes
We report on the effects of the As/P intermixing induced by phosphorus ion implantation in
InAs/InP quantum dashes (QDas) on their photoluminescence (PL) properties. For …
InAs/InP quantum dashes (QDas) on their photoluminescence (PL) properties. For …
[HTML][HTML] Multiple wavelength InGaAs quantum dot lasers using ion implantation induced intermixing
We demonstrate multiple wavelength InGaAs quantum dot lasers using ion implantation
induced intermixing. Proton implantation, followed by annealing is used to create differential …
induced intermixing. Proton implantation, followed by annealing is used to create differential …