This paper reviews the recent activities for normally-off GaN-based gate injection transistors
(GITs) on Si substrates and their application to inverters. Epitaxial growth of the AlGaN/GaN …

During the last few years the developments in the field of III–nitrides have been spectacular.
High quality epitaxial layers can now be grown by MOVPE. Recently good quality epilayers …

In this review, the structural, mechanical, thermal, and chemical properties of substrates
used for gallium nitride (GaN) epitaxy are compiled, and the properties of GaN films …

This work investigates the influence of residual stress on the performance of InGaN-based
red light-emitting diodes (LEDs) by changing the thickness of the underlying n-GaN layers …

Abstract Photoluminescence (PL), Raman spectroscopy, and x-ray diffraction are employed
to demonstrate the co-existence of a biaxial and a hydrostatic strain that can be present in …

1. Introduction Recently, blue-or ultraviolet-light-emitting lasers have been developed using
GaN and InGaN-based compound semiconductors.*** These device structures have been …

GaN-based light-emitting devices have the potential to realize all visible emissions with the
same material system. These emitters are expected to be next-generation red, green, and …

Lattice parameters of gallium nitride were measured using high-resolution x-ray diffraction.
The following samples were examined:(i) single crystals grown at pressure of about 15 …

Single crystal GaN films with a wurtzite structure were grown on the basal plane of sapphire.
A high density of threading dislocations parallel to the c-axis crossed the film from the …

Thermal stress in GaN epitaxial layers with different thicknesses grown on sapphire
substrates by metalorganic vapor phase epitaxy using an AlN buffer layer was investigated …