Exploring new synaptic electronic devices that combine computing and memory is a
promising strategy that fundamentally approaches intelligent machines. In this study, the …

Uniformly sized hexagonal shaped manganese oxide (MnO) nanoparticles were chemically
synthesized. The bipolar resistive switching characteristics were investigated in the …

Memristors have been at the forefront of nanoelectronics research for the last few decades,
offering a valuable component to reconfigurable computing. Their attributes have been …

BixSr1− xF e0. 6Sn0. 4O3 (0.2≤ x≤ 0.6) thermistor ceramics were prepared by
conventional solid‐state reaction method. The Bi substitution affected the crystalline …

In this study, transparent amorphous MgNb 2 O 6 (MNO) films were fabricated via the sol‐gel
method to form an Al/MNO/indium tin oxide/glass structure. The resistive switching (RS) …

The capacitance (C) and the resistance (R) were measured at various states as the reset
process progressed in bipolar-resistance-switching Ta/TaO x/Pt thin film capacitors. The …

Abstract The 2-dimensional electron gas (2DEG) at the LaAlO 3/SrTiO 3 heterointerface was
analyzed using frequency-dependent impedance spectroscopy. The electrical conduction of …

Conventional semiconductor memories have encountered their limitations for sustained
advance in data processing and storage technologies. One emerging memory, the resistive …

As memórias RERAM, acrónimo de resistive (switching) random access me mories,
apresentam-se como candidatas a Iderara nova geração de memórias não vo iteis e …