Silicon carbide (SiC), due to its characteristic materials performance, gets more attention in
Radio Frequecy (RC) and High-power device fabrication. However, SiC wafer dicing has …

The interaction of dislocations with plasma Si in a laser-injected Si was studied
comprehensively using a combination of in-situ and ex-situ heating experiments in 200 kV …

Voids formed in Si by permeable laser irradiation were investigated by comprehensive
electron microscopy. Two types of voids were identified: Type (1): This type was formed …

Microstructure of laser induced modified volume (LIMV) in Si was examined using
transmission electron microscopy (TEM) and infra-red optical microscopy. Dominant features …

Silicon (Si) is widely used material in microelectronics, MEMS, photonics and more.
Although Si is not transparent for commonly used processing lasers in near infrared to …

The mechanism of void formation in crystalline silicon after laser irradiation is extensively
studied by molecular-dynamics simulations. When the laser-irradiated region is melted due …

In a stealth dicing of Si wafers, voids are formed in laser-induced modified volumes (LIMVs).
Most of the voids are free from apparent defects such as dislocations and cracks. Needless …

Si is opaque to visible light, but transparent to infrared rays. Therefore, when the infrared
laser is focused inside Si, the focal portion becomes ultra-hot, forming a modified volume …

Processing of transparent materials by non-linear absorption mechanisms induced by short
pulse lasers has been applied in many fields. Silicon (Si) is widely used materials in …

We have developed a novel debris-free low-stress high-speed laser-assited dicing
technology for multi-layered MEMS wafers, which generally consist of glass and Si. Our …