Contemporary innovations in two-dimensional transition metal dichalcogenide-based P–N junctions for optoelectronics

E Elahi, M Ahmad, A Dahshan, M Rabeel, S Saleem… - Nanoscale, 2024 - pubs.rsc.org
Two-dimensional transition metal dichalcogenides (2D-TMDCs) with various physical
characteristics have attracted significant interest from the scientific and industrial worlds in …

Efficient water splitting catalyst: Low-temperature selenization of Co and Ni hydroxide nanosheets on carbon cloth for enhanced electro-catalytic activity

M Hassan, MM Baig, S Yousaf, M Faheem… - Diamond and Related …, 2023 - Elsevier
The primary challenge in achieving full water splitting is the high cost of Pt/C-based
materials and efficient electrocatalysts for both the oxygen evolution reaction (OER) and the …

Transformation of rust iron into a sustainable product for applications in the electronic, energy, biomedical, and environment fields: Towards a multitasking approach

VD Chavan, J Aziz, H Kim, SR Patil, RE Ustad… - Nano Today, 2024 - Elsevier
Utilization of waste material for value-added applications is a sustainable approach towards
reduction of global waste. Herein, the waste rust iron is transformed into useful Fe 2 O 3 …

Solution-processed colloidal quantum dots for internet of things

DM Othman, J Weinstein, N Huang, W Ming, Q Lyu… - Nanoscale, 2024 - pubs.rsc.org
Colloidal quantum dots (CQDs) have been a hot research topic ever since they were
successfully fabricated in 1993 via the hot injection method. The Nobel Prize in Chemistry …

Gate-controlled rectification and broadband photodetection in a P–N diode based on TMDC heterostructures

E Elahi, S Nisar, M Rabeel, MA Rehman… - Materials …, 2024 - pubs.rsc.org
van der Waals (vdW) heterostructures in two dimensions have electrical and optoelectronic
characteristics that make them a suitable platform for the creation of sophisticated nanoscale …

Towards ultralow-power and high-speed electronics: Tunnel transistor based on single-chain Tellurium

W Zhang, B Wang, K Li, Y Sun, J Zhou, Z Sun - Materials Today Physics, 2024 - Elsevier
The application of tunnel field-effect transistors (TFETs) in the sub-5.1 nm range meets the
challenges of low on-state current (I on), elevated leakage current (I leak) and a limited bias …

A Microlens Array Grating for Miniature Multi-Channel Spectrometers

S Shan, J Li, P Liu, Q Li, X Wang, X Li - Sensors, 2023 - mdpi.com
Most existing multi-channel spectrometers are constructed by physically stacking single-
channel spectrometers, resulting in their large size, high weight, and limited number of …

Enhanced irradiation stability of MOSFET devices realized by improving nucleus density of CrxNbMoTaW generated by lattice shrinkage

W Wei, Y Hong, X Shi, Y Li, K Cui, T Zhang, X Jia… - Materials Today …, 2024 - Elsevier
The limited irradiation stability of metal-oxide-semiconductor field-effect transistor (MOSFET)
devices has restricted their application in deep space exploration missions. Therefore, it is …

Unveiling the potential of vanadium-doped CVD-grown p-type MoS2 in vertical homojunction UV–Vis photodiodes

M Suleman, S Lee, M Kim, M Riaz, Z Abbas… - Materials Today …, 2024 - Elsevier
Abstract 2D materials are a popular choice for the fabrication of pn diodes for applications in
integrated optoelectronics owing to their outstanding properties such as strong light-matter …

[HTML][HTML] Controlled Charge Transport in ZrO2 and its Bilayer Structures for Low-Power Memory

J Aziz, MF Khan, D Neumaier, Z Miao, E Elahi… - Journal of Alloys and …, 2024 - Elsevier
Redox-based oxide resistive random-access memories (ReRAM) are being pursued as
adjustable electronic devices for integrated network applications such as neuromorphic …