Effects of high-kgate stacks and plasma treatments on electrical and reliability characteristics
of FinFET were comprehensively studied in this work. A higher ONcurrent, higher ON-/OFF …

A self-aligned inkjet printing process has been developed to construct small channel metal
oxide (a-IGZO) thin-film transistors (TFTs) with independent bottom gates on transparent …

In this work, a postgate CF 4 plasma treatment has been demonstrated on In 0.53 Ga 0.47
As channel metal-oxide-semiconductor field-effect transistors. Fluorine (F) has been …

In this paper, the current transportation mechanism of HfO 2 gate dielectrics with a TaN
metal gate and silicon surface fluorine implantation is investigated. Based on the …

The superior characteristics of fluorinated gate dielectrics were investigated. Fluorine was
incorporated into thin film by postdeposition plasma treatment to form fluorinated gate …

In this study, the effect of post-deposition tetrafluoromethane (CF4) plasma treatment on the
physical and electrical characteristics of an In2TiO5 based electrolyte-insulator …

Novel fluorine-doped zinc tin oxide (ZTO: F) thin-film transistors (TFTs) have been fabricated
using an aqueous solution process. Exploiting hydrolysis and condensation reactions in an …

We have investigated the microstructure and electrical properties of HfTaON high-k films
deposited on n-type Si (100) substrate using a dual ion beam sputtering deposition …

In this paper, we demonstrate TaN/fluorinated HfO 2 CMOS devices, focusing on symmetry
and asymmetry fluorine incorporation at top or bottom HfO 2 interfaces. 16% permittivity …

Electrical characteristics of Ge buried channel FinFETs with interfacial layer (IL) treated by
CF 4, NH 3, and H 2 plasma were studied in this work. Although Ge buried channel and …