Frequency dispersion of high-k dielectrics was observed and classified into two parts:
extrinsic cause and intrinsic cause. Frequency dependence of dielectric constant (dielectric …

Abstract 2D carbon nanomaterial graphene has been the subject of intense research on
optoelectronic properties. Advancements in graphene-based optoelectronic devices can …

A novel analytical model of surface potential for a double metal gate schottky barrier
tunnelling (SBT) FET using schottky tunnelling with HfO 2 as gate dielectric is proposed. The …

Trilayer graphene nanoribbon (TGN) has great potential in related biomedical applications
such as drug and gene delivery and deoxyribonucleic acid (DNA) sensing. The performance …

Feasibility of a gas sensor with NH 3 as a prototype using carbon allotropes (graphene and
CNT) is demonstrated, with graphene displaying superior sensitivity and conductance. Such …

Abstract Boron Nitro silicon (Si 2 BN), as a 2D material, is used in a wide variety of
applications due to its outstanding electrical properties. The electrical parameters of Si 2 BN …

The effects of a Stone–Wales defect on the performance of a graphene-nanoribbon-based
Schottky diode are studied herein. To this end, the transmission, energy band structure …

Trilayer graphene nanoribbon as a superlative semiconductor promises potential
applications in the diodes, FETs, gas and biosensors. It is a suitable candidate for …

Today, electromagnetic waves play an important role in our lives. These waves are used for
radio and television communications, telecommunication networks and all wireless …

Graphene is a semiconductor with zero band-gap, meaning that the energy difference
between the valence band and conduction band is zero. This characteristic is not a good …