A comprehensive review of gallium nitride (GaN)-based gas sensors and their dynamic responses
Gas-sensing technology that is ubiquitous has progressively gained significance in our daily
lives. There is a growing requirement for real-time, dependable and low-concentration gas …
lives. There is a growing requirement for real-time, dependable and low-concentration gas …
AlGaN/GaN high electron mobility transistor for various sensing applications: a review
AlGaN/GaN high electron mobility transistors (HEMTs) demonstrate exceptional properties
desired for sensing regime applications due to their extraordinary chemical stability, non …
desired for sensing regime applications due to their extraordinary chemical stability, non …
2.5 A/mm/350 GHz aggressively scaled gate engineered Fe-doped AlN/GaN channel HEMT with graded InGaN Backbarrier on SiC-wafer for next generation RF …
This study intends to investigate the effects of barrier scaling, a crucial RF GaN-HEMT
design element, which is imperative to achieve enhanced performance at nano-scale …
design element, which is imperative to achieve enhanced performance at nano-scale …
Investigation on effect of AlN barrier thickness and lateral scalability of Fe-doped recessed T-gate AlN/GaN/SiC HEMT with polarization-graded back barrier for future …
In this study, the influence of AlN barrier thickness (tb) on the RF & DC performances of 50
nm recessed T-gate Fe-doped AlN/GaN/SiC HEMT is investigated. The proposed HEMT …
nm recessed T-gate Fe-doped AlN/GaN/SiC HEMT is investigated. The proposed HEMT …
Development of a stacked machine learning model to compute the capability of ZnO-based sensors for hydrogen detection
Zinc oxide (ZnO) nanocomposite sensors decorated with various dopants are popular tools
for detecting even low hydrogen (H 2) concentrations. The nanocomposite's chemistry …
for detecting even low hydrogen (H 2) concentrations. The nanocomposite's chemistry …
High-precision trace hydrogen sensing by multipass Raman scattering
J Singh, A Muller - Sensors, 2023 - mdpi.com
Despite its growing importance in the energy generation and storage industry, the detection
of hydrogen in trace concentrations remains challenging, as established optical absorption …
of hydrogen in trace concentrations remains challenging, as established optical absorption …
High Electron Mobility Transistor (HEMT) based hydrogen sensor for deep-surface applications: Effect of Air and N2 atmosphere
The detection of hydrogen in the Earth's deep underground poses a major challenge due to
the lack of oxygen and continuous changes in environmental conditions. An innovative class …
the lack of oxygen and continuous changes in environmental conditions. An innovative class …
An intensive study on effects of lateral scaling and gate metals on the RF/DC performance of recessed T-gated Fe-doped AlN/GaN/SiC HEMTs for future RF and …
In this simulation work, the effect of Al x Ga 1-x N and In x Ga 1-x N back barriers (BB) on the
RF & DC performances of recessed T-gated Fe-doped AlN/GaN/SiC HEMT device is …
RF & DC performances of recessed T-gated Fe-doped AlN/GaN/SiC HEMT device is …
A review of hydrogen sensors for ECLSS: fundamentals, recent advances, and challenges
C Jia, L Zhao, G Huang, L Liu, W Wang, Y Yang… - Applied Sciences, 2023 - mdpi.com
The development of hydrogen sensors with high detection accuracy, fast response times,
long calibration periods, and good stability has become the focus of the space station …
long calibration periods, and good stability has become the focus of the space station …
Investigation on impact of AlxGa1-xN and InGaN back barriers and source-drain spacing on the DC/RF performance of Fe-doped recessed T-gated AlN/GaN HEMT on …
The work function (φ m) of gate metal is crucial to electrical characteristics in standard GaN-
based high electron mobility transistors (HEMTs). In this simulation report, RF & DC …
based high electron mobility transistors (HEMTs). In this simulation report, RF & DC …