While silicon and gallium arsenide are dominant materials in modern micro-and
nanoelectronics, devices fabricated from them still use Si and GaAs substrates only …

We review recent progress in the growth and characterization of Si 1− x Ge x islands and Ge
dots on (001) Si. We discuss the evolution of the island morphology with Si 1− x Ge x …

An embodiment vertical wrapped-around structure and method of making. An embodiment
method of making a self-aligned vertical structure-all-around device including forming a …

A compressed elastic film on a compliant substrate can form wrinkles. On an elastic
substrate, equilibrium and energetics set the critical condition and select the wrinkle …

A compressively strained film on a substrate can wrinkle into intricate patterns. This Rapid
Communication studies the evolution of the wrinkle patterns. The film is modeled as an …

This article describes various techniques for applying strain to current and future
complementary metal–oxide–semiconductor (CMOS) channels to boost CMOS …

Five wrinkling coating systems–ranging from liquid-applied, thermally cured acrylic-
melamine and alkyd systems to powder-applied, thermally cured epoxy and polyester …

Fully-depleted strained Si n-channel MOSFETs were demonstrated on a compliant
borophosphorosilicate insulator (BPSG) without an underlying SiGe buffer layer. Stress …

Кремний является основным материалом электроники. Около 95% всех
полупроводниковых приборов производится с использованием кремниевых подложек …

Abstract A vertical Metal-Oxide-Semiconductor (MOS) transistor includes a substrate and a
nano-wire over the substrate. The nano-wire comprises a semiconductor material. An oxide …