With the increasing power density and reduced size of the GaN-based electronic power
converters, the heat dissipation in the devices becomes the key issue toward the real …

The emergence of wide and ultrawide bandgap semiconductors has revolutionized the
advancement of next-generation power, radio frequency, and opto-electronics, paving the …

Gallium nitride (GaN) is a compound semiconductor that has tremendous potential to
facilitate economic growth in a semiconductor industry that is silicon-based and currently …

The implementation of 5G-and-beyond networks requires faster, high-performance, and
power-efficient semiconductor devices, which are only possible with materials that can …

The wide bandgap, high-breakdown electric field, and high carrier mobility makes GaN an
ideal material for high-power and high-frequency electronics applications, such as wireless …

GaN HEMT has attracted a lot of attention in recent years owing to its wide applications from
the high-frequency power amplifier to the high voltage devices used in power electronic …

The peak power density of GaN high-electron-mobility transistor technology is limited by a
hierarchy of thermal resistances from the junction to the ambient. Here, we explore the …

Record DC power has been demonstrated in AlGaN/GaN high electron mobility transistors
fabricated using a substrate replacement process in which a thick diamond substrate is …

Successful utilization of the inherent capability of wide bandgap materials and architectures
for radio frequency (RF) power amplifiers (PAs) necessitates the creation of an alternative …

Bonding diamond to the back side of gallium nitride (GaN) electronics has been shown to
improve thermal management in lateral devices; however, engineering challenges remain …