Huge differences between low-and high-angle twist grain boundaries: The case of ultrathin (001) Si films bonded to (001) Si wafers
JL Rouviere, K Rousseau, F Fournel… - Applied Physics …, 2000 - pubs.aip.org
Ultrathin 001 Si films bonded onto 001 Si wafers, inducing grain boundaries with twist
angles varying from 0.5 to 12, were studied by transmission electron microscopy. A great …
angles varying from 0.5 to 12, were studied by transmission electron microscopy. A great …
Stability of interfacial dislocations in (001) silicon surfacial grain boundaries
K Rousseau, JL Rouviere, F Fournel… - Applied physics …, 2002 - pubs.aip.org
Ultrathin (001) silicon films bonded onto (001) silicon wafers, which form “surfacial grain
boundaries” have been investigated by transmission electron microscopy. The samples …
boundaries” have been investigated by transmission electron microscopy. The samples …
Dislocation strain field in ultrathin bonded silicon wafers studied by grazing incidence x-ray diffraction
An ultrathin silicon layer (16 nm) bonded onto a silicon wafer is studied by grazing incidence
x-ray diffraction. We measure satellite peaks around the {220} reflections coming from two …
x-ray diffraction. We measure satellite peaks around the {220} reflections coming from two …
Grazing incidence X-ray studies of twist-bonded Si/Si and Si/SiO2 interfaces
Twist-bonded Si/Si (001) and Si/SiO2 interfaces have been investigated by grazing
incidence X-ray scattering methods. For Si/Si (001) bonding, conventional X-ray reflectivity …
incidence X-ray scattering methods. For Si/Si (001) bonding, conventional X-ray reflectivity …
Toward two-dimensional self-organization of nanostructures using wafer bonding and nanopatterned silicon surfaces
The structure of ultrathin silicon layers obtained by molecular hydrophobic bonding is
investigated. The twist and tilt angles between the two crystals are accurately controlled. The …
investigated. The twist and tilt angles between the two crystals are accurately controlled. The …
[PDF][PDF] Ultrathin Porous Silicon Films
B Bessaïs - Handbook of Porous Silicon, 2018 - academia.edu
Investigations of the structure and morphology of ultrathin PS films are reviewed, of
relevance to the technological control of miniaturized PS-based devices. Several …
relevance to the technological control of miniaturized PS-based devices. Several …
Strain in hydrogen and oxygen implanted silicon and SOI structures annealed at high pressure
J Bak-Misiuk, IV Antonova, A Misiuk… - Journal of alloys and …, 2001 - Elsevier
Effect of annealing up to 1400 K under argon pressure up to 1.2 GPa (HT-HP treatment) on
silicon implanted with hydrogen (Si: H), oxygen (Si: O) and on silicon-on-insulator (SOI) …
silicon implanted with hydrogen (Si: H), oxygen (Si: O) and on silicon-on-insulator (SOI) …
Alternate dissociation of the screw dislocations in a (0 0 1) buried small-angle twist boundary in silicon
R Bonnet, M Loubradou, S Youssef… - Philosophical …, 2009 - Taylor & Francis
The square dislocation network of a (0 0 1) buried small-angle boundary in silicon was
observed by dark-field transmission electron microscopy to examine the structures of more …
observed by dark-field transmission electron microscopy to examine the structures of more …
Dislocation Networks Strain Fields Induced By Si Wafer Bonding.
Buried dislocation superlattices are obtained by bonding ultra-thin single crystal Si (001)
films on Si (001) wafers. The twist of two Si wafers induces a regular square grid of …
films on Si (001) wafers. The twist of two Si wafers induces a regular square grid of …
High mobility electron heterostructure wafer fused onto LiNbO3
KJ Friedland, A Riedel, H Kostial, M Höricke… - Journal of electronic …, 2001 - Springer
Abstract An (Al, Ga) As heterostructure consisting of a 10 nm wide GaAs single quantum well
and an optimized AlAs/GaAs type-II-superlattice barrier is fused onto a new LiNbO 3 …
and an optimized AlAs/GaAs type-II-superlattice barrier is fused onto a new LiNbO 3 …