This paper reports comprehensive characterization of vertical GaN-on-GaN Schottky barrier
diodes (SBDs) fabricated on free-standing GaN substrates. The GaN active layer properties …

An elaborate characterization of Si Schottky diodes, fabricated with Ti and Mo contacts, is
presented. Thermal treatment in forming gas is performed in order to improve the electrical …

In this study, the variation of Schottky gate contact characteristics of InP-based HEMTs have
been studied with the irradiation fluence range from 1× 10 14 cm-2 to 1× 10 16 cm-2 at 1 …

Alpha voltaic effect in 4H-SiC Schottky barrier diodes (SBDs) with Nickel (Ni) and Titanium
(Ti) as Schottky contacts is demonstrated using 5.5 MeV energetic 241 Am alpha source of …

The electrical behavior improvement of nonuniform Ni/4H-SiC Schottky diodes, akin to that
caused by thermal annealing, is demonstrated after continuous exposure to high operating …

High-temperature reverse bias (HTRB) stress effects on static and dynamic characteristics of
0.15 AlGaN/GaN high-electron mobility transistors (HEMTs) are reported. The HEMTs were …

An ultra-high voltage SiC JBS (silicon carbide junction barrier Schottky) rectifier utilizing a
novel area-efficient multi-zone gradient modulated field limiting ring (MGM-FLR) technique …

Advancement in the growth of 4H-SiC with low micropipe densities (∼ 0.11 cm-2) in
achieving high pure epitaxial layers, enabled the development of high-resolution 4H-SiC …

Thermal annealing effects on gamma irradiated Ni/4H-SiC Schottky barrier diode (SBD)
characteristics are analyzed over a wide range of temperatures (400–1100 C). The …

Rapid evolution in various technical fields is the result of growth in semiconductor
technology. Schottky barrier diode (SBD) alternatively known as hot carrier diode exhibit …