Ferroelectric field effect transistors for memory applications
The non‐volatile polarization of a ferroelectric is a promising candidate for digital memory
applications. Ferroelectric capacitors have been successfully integrated with silicon …
applications. Ferroelectric capacitors have been successfully integrated with silicon …
Crystalline oxides on silicon
This review outlines developments in the growth of crystalline oxides on the ubiquitous
silicon semiconductor platform. The overall goal of this endeavor is the integration of …
silicon semiconductor platform. The overall goal of this endeavor is the integration of …
Epitaxial oxides on semiconductors: from fundamentals to new devices
Functional oxides are an untapped resource for futuristic devices and functionalities. These
functionalities can range from high temperature superconductivity to multiferroicity and novel …
functionalities can range from high temperature superconductivity to multiferroicity and novel …
X-ray photoemission studies of the metal-insulator transition in structures grown by molecular beam epitaxy
LaAlO 3/SrTiO 3 interfaces grown by molecular beam epitaxy show a metal-insulator
transition at a critical film thickness of four unit cells of LaAlO 3 on TiO 2-terminated SrTiO 3 …
transition at a critical film thickness of four unit cells of LaAlO 3 on TiO 2-terminated SrTiO 3 …
[HTML][HTML] Atomic layer deposition of perovskite oxides and their epitaxial integration with Si, Ge, and other semiconductors
Atomic layer deposition (ALD) is a proven technique for the conformal deposition of oxide
thin films with nanoscale thickness control. Most successful industrial applications have …
thin films with nanoscale thickness control. Most successful industrial applications have …
La-doped alumina, lanthanum aluminate, lanthanum hexaaluminate, and related compounds: a review covering synthesis, structure, and practical importance
J Heveling - Industrial & Engineering Chemistry Research, 2023 - ACS Publications
Advanced materials based on lanthanum–aluminum oxides are useful for many practical
applications, not the least in catalysis, energy conversion and energy storage systems …
applications, not the least in catalysis, energy conversion and energy storage systems …
Epitaxial c-axis oriented BaTiO3 thin films on SrTiO3-buffered Si (001) by atomic layer deposition
Atomic layer deposition (ALD) of epitaxial c-axis oriented BaTiO 3 (BTO) on Si (001) using a
thin (1.6 nm) buffer layer of SrTiO 3 (STO) grown by molecular beam epitaxy is reported. The …
thin (1.6 nm) buffer layer of SrTiO 3 (STO) grown by molecular beam epitaxy is reported. The …
Structural phase transitions of the metal oxide perovskites SrTiO, LaAlO, and LaTiO studied with a screened hybrid functional
We have investigated the structural phase transitions of the transition metal oxide
perovskites SrTiO 3, LaAlO 3, and LaTiO 3 using the screened hybrid density functional of …
perovskites SrTiO 3, LaAlO 3, and LaTiO 3 using the screened hybrid density functional of …
Strain relaxation in single crystal SrTiO3 grown on Si (001) by molecular beam epitaxy
An epitaxial layer of SrTiO 3 grown directly on Si may be used as a pseudo-substrate for the
integration of perovskite oxides onto silicon. When SrTiO 3 is initially grown on Si (001), it is …
integration of perovskite oxides onto silicon. When SrTiO 3 is initially grown on Si (001), it is …
Epitaxial strontium titanate films grown by atomic layer deposition on SrTiO3-buffered Si (001) substrates
MD McDaniel, A Posadas, TQ Ngo… - Journal of Vacuum …, 2013 - pubs.aip.org
Epitaxial strontium titanate (STO) films have been grown by atomic layer deposition (ALD)
on Si (001) substrates with a thin STO buffer layer grown by molecular beam epitaxy (MBE) …
on Si (001) substrates with a thin STO buffer layer grown by molecular beam epitaxy (MBE) …