The continuation of Moore's law requires new materials at both extremes of the dielectric
permittivity spectrum and an increased understanding of the fundamental mechanisms …

Studies have shown that interfaces play a crucial role for efficient spin injection and
transport. Here, we address the complex role of interface in spin and charge injection into …

Ultra-thin HfTiOx dielectric films (Ti~ 26.6%) of thickness~ 12 nm have been deposited
through an RF magnetron co-sputtering process on strained Si0. 81Ge0. 19 substrates …

We investigate the energy levels of electron traps in AlGaN/GaN high electron mobility
transistors by the use of electron tunneling spectroscopy. Detailed analysis of a typical …

A broad range of materials is currently being studied for possible use as the insulating layer
in next generation metal‐oxide‐semiconductor transistors. Inelastic electron tunneling …

Oxide materials with large dielectric constants (so-called high-k dielectrics) have attracted
much attention due to their potential use as gate dielectrics in Metal Oxide Semiconductor …

Changes in phonon spectra and point defect populations that accompany crystallization of
HfO 2 were investigated by inelastic tunneling across Al/HfO 2/SiO 2/Si⁠. Spectral features …

A powerful characterization technique, pulse capacitance-voltage (CV) technique, was used
to investigate oxide traps before and after annealing for lanthanide zirconium oxide thin films …

Electron tunneling spectroscopy (ETS) was used to study amorphous La Al O 3 and La Sc O
3 thin film gate dielectrics for silicon metal-oxide-semiconductor structure. These gate …

Inelastic electron tunneling spectroscopy (IETS) was applied to characterize the
microstructure, interface, and trap-related states in silicon metal-oxide-semiconductor …