A low-noise amplifier, direct-conversion quadrature mixer, power amplifier, and voltage-
controlled oscillators have been implemented in a 0.12-/spl mu/m, 200-GHz f/sub T/290-GHz …

The design and measured results of a single-substrate transceiver module suitable for 76-77-
GHz pulsed-Doppler radar applications are presented. Emphasis on ease of manufacture …

We report the first generation of GaN MMIC circuits that are based on the latest generation of
(ft> 320 GHz and fmax> 580 GHz)[1] GaN Transistors. The reported broadband Ka-band (27 …

This paper reviews recent progress in the development of GaAs metamorphic HEMT
(MHEMT) technology for microwave applications. Commercialization has begun, while …

In this study, the design of a monolithic wideband low‐noise amplifier (LNA) is presented
and addressed with circuitry and modelling techniques which make it suitable for system …

A Ka-band monolithic low noise two stage amplifier has been developed using an
AlGaAs/InGaAs/GaAs pseudomorphic HEMT with a gate length of 0.15/spl mu/m. For a …

Two Q-band low noise amplifiers using a 0.15-μm InGaAs MHEMT process for broadband
communication and radio astronomy applications are presented in this paper. Between 37 …

This paper presents millimeter wave monolithic microwave integrated circuit (MMIC) low
noise amplifiers using a 0.15 µm commercial pHEMT process. After carefully investigating …

Compact Ka-Band MMIC low noise amplifiers have been developed with high gain, low
VSWR and low power dissipation using 0.12/spl mu/m InP HEMT technology. A five stage …

We describe a 60-GHz coplanar MMIC low-noise amplifier (LNA) using 0.1/spl mu/m-gate-
length InP heterojunction FETs (HJFETs). An optimum gate width of 80/spl mu/m was …