An evaluation of silicon carbide unipolar technologies for electric vehicle drive-trains
Voltage sourced converters (VSCs) in electric vehicle (EV) drive-trains are conventionally
implemented by silicon Insulated Gate Bipolar Transistors (IGBTs) and pin diodes. The …
implemented by silicon Insulated Gate Bipolar Transistors (IGBTs) and pin diodes. The …
Thermal stability of IGBT high-frequency operation
K Sheng, SJ Finney, BW Williams - IEEE transactions on …, 2000 - ieeexplore.ieee.org
Thermal stability of high-frequency insulated gate bipolar transistor (IGBT) operation is
studied in this paper. The nonpunch-through IGBT is found to be stable when operated …
studied in this paper. The nonpunch-through IGBT is found to be stable when operated …
高压IGBT 芯片换流运行的热稳定性分析
范迦羽， 郑飞麟， 和峰， 王耀华， 彭程… - 华北电力大学学报 …, 2022 - epjournal.csee.org.cn
为保证高压绝缘栅双极型晶体管(Insulated Gate Bipolar Transistor, IGBT) 器件换流运行时的热
稳定性, 需要根据IGBT 芯片的电热特性和器件的散热设计, 确定芯片运行的热稳定工作区 …
稳定性, 需要根据IGBT 芯片的电热特性和器件的散热设计, 确定芯片运行的热稳定工作区 …
Behaviour of punch-through and non-punch-through insulated gate bipolar transistors under high temperature gate bias stress
CO Maiga, B Tala-Ighil, H Toutah… - 2004 IEEE International …, 2004 - ieeexplore.ieee.org
The work presented in this paper is concerned with the effects of a high temperature gate
bias (HTGB) stress on punch-through (PT) and non-punch-through (NPT) insulated gate …
bias (HTGB) stress on punch-through (PT) and non-punch-through (NPT) insulated gate …
Analysis of dynamic performance and robustness of silicon and SiC power electronics devices
S Jahdi - 2016 - wrap.warwick.ac.uk
The emergence of SiC power devices requires evaluation of benefits and issues of the
technology in applications. This is important since SiC power devices are still not as mature …
technology in applications. This is important since SiC power devices are still not as mature …
Experimental study of power IGBT technologies at large range temperature
JL Fock-Sui-Too, B Chauchat, S Nicolau… - … on Mixed Design of …, 2008 - ieeexplore.ieee.org
Aeronautical power electronics applications impose high power density handling and device
operation temperatures. SiC technology not being mature enough, the temperature limits of …
operation temperatures. SiC technology not being mature enough, the temperature limits of …
Soft-switching performance analysis of the clustered insulated gate bipolar transistor (CIGBT)
JC Nicholls - Ph. D. Thesis, 2009 - ui.adsabs.harvard.edu
Abstract The use of Insulated Gate Bipolar Transistors (IGBT) have enabled better switching
performance than the Metal Oxide Semiconductor Field effect Transistor (MOSFET) in …
performance than the Metal Oxide Semiconductor Field effect Transistor (MOSFET) in …
Non-punch-through insulated gate bipolar transistors under high temperature gate bias and high temperature reverse bias stresses-hard-switching performances …
CO Maiga, B Tala-Ighil, H Toutah… - … Conference on Power …, 2005 - ieeexplore.ieee.org
The work presented in this paper is concerned with the effects of a high temperature gate
bias (HTGB) and a high temperature reverse bias (HTRB) stresses on non-punch-through …
bias (HTGB) and a high temperature reverse bias (HTRB) stresses on non-punch-through …
Modeling for internal transparent collector IGBT
D Hu, Y Wu, Y Jia, B Kang… - 2009 IEEE 6th …, 2009 - ieeexplore.ieee.org
Internal transparent collector (ITC) insulated gate bipolar transistor (IGBT) is a new type
IGBT. Its structure is quite similar to that of the PT-IGBT, but a very low carrier lifetime control …
IGBT. Its structure is quite similar to that of the PT-IGBT, but a very low carrier lifetime control …
SPICE modeling of PT IGBT thermal behavior
N Jankovic, P Igic - 9th International Seminar on Power Semiconductors …, 2008 - IET
An electro-thermal model of punch-trough (PT) IGBT having a small set of temperature
related fitting parameters was developed and implemented in SPICE. The model accuracy in …
related fitting parameters was developed and implemented in SPICE. The model accuracy in …