A review of germanium-antimony-telluride phase change materials for non-volatile memories and optical modulators
Chalcogenide phase change materials based on germanium-antimony-tellurides (GST-
PCMs) have shown outstanding properties in non-volatile memory (NVM) technologies due …
PCMs) have shown outstanding properties in non-volatile memory (NVM) technologies due …
Phase change memory cell and manufacturing method
HL Lung, R Liu, SH Chen, YC Chen - US Patent 7,688,619, 2010 - Google Patents
4,719,594 4,769,339 4,876,220 4.959, 812 5,106,775 5,166,096 5,166,758 5,177.567
5,332,923 5,391,901 5,515.488 5,534,712 5,550,396 5,687,112 5,688,713 5,716,883 …
5,332,923 5,391,901 5,515.488 5,534,712 5,550,396 5,687,112 5,688,713 5,716,883 …
Phase change memory device and manufacturing method
HL Lung, SH Chen - US Patent 7,786,460, 2010 - Google Patents
A phase change memory device comprises a photolithographically formed phase change
memory cell having first and second electrodes and a phase change element positioned …
memory cell having first and second electrodes and a phase change element positioned …
Bridge resistance random access memory device with a singular contact structure
CH Ho, EK Lai, KY Hsieh - US Patent 7,608,848, 2009 - Google Patents
US7608848B2 - Bridge resistance random access memory device with a singular contact
structure - Google Patents US7608848B2 - Bridge resistance random access memory device …
structure - Google Patents US7608848B2 - Bridge resistance random access memory device …
Multi-level cell resistance random access memory with metal oxides
EK Lai, CH Ho, KY Hsieh - US Patent 7,697,316, 2010 - Google Patents
5,789,758 5,814,527 5,831.276 5,837,564 5,869,843 5,879,955 5,920,788 5,952,671
5,970,336 5,985,698 5.998, 244 6,011,725 6,025,220 6,031,287 6,034,882 6,077,729 …
5,970,336 5,985,698 5.998, 244 6,011,725 6,025,220 6,031,287 6,034,882 6,077,729 …
Methods of operating a bistable resistance random access memory with multiple memory layers and multilevel memory states
CH Ho, EK Lai, KY Hsieh - US Patent 7,586,778, 2009 - Google Patents
(57) ABSTRACT A method is described for operating a bistable resistance random access
memory having two memory layer stacks that are aligned in series is disclosed. The bistable …
memory having two memory layer stacks that are aligned in series is disclosed. The bistable …
A dynamically reconfigurable ambipolar black phosphorus memory device
Nonvolatile charge-trap memory plays an important role in many modern electronics
technologies, from portable electronic systems to large-scale data centers. Conventional …
technologies, from portable electronic systems to large-scale data centers. Conventional …
Side wall active pin memory and manufacturing method
HL Lung, SH Chen, YC Chen - US Patent 7,608,503, 2009 - Google Patents
A method of forming a memory cell comprises forming a stack comprising a first electrode,
an insulating layer over the first electrode, and a second electrode over the insulating layer …
an insulating layer over the first electrode, and a second electrode over the insulating layer …
Programmable resistive RAM and manufacturing method
CH Ho, EK Lai, KY Hsieh - US Patent 7,560,337, 2009 - Google Patents
US7560337B2 - Programmable resistive RAM and manufacturing method - Google Patents
US7560337B2 - Programmable resistive RAM and manufacturing method - Google Patents …
US7560337B2 - Programmable resistive RAM and manufacturing method - Google Patents …
Integrated circuit 3D phase change memory array and manufacturing method
HL Lung - US Patent 8,173,987, 2012 - Google Patents
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4,452,592 A 6, 1984 Tsai 4,599,705 A 7/1986 Holmberg et al. 4,719,594 A 1/1988 Young et …