4411, 741. A 10/1983 Janata associated with the same are provided. The sensors include
4,636,827 A 1, 1987 Rudolf regions that can interact with chemical species being 4, 791465 …

An improved field effect transistor formed in the Group III nitride material system includes a
two part structure in which a chemical vapor deposited passivation layer of silicon nitride …

An AlN buffer layer, an undoped GaN layer, an undoped AlGaN layer, a p-type GaN layer
and a heavily doped p-type GaN layer are formed in this order. A gate electrode forms an …

(57) ABSTRACT A semiconductor sensor determines physical and/or chemical properties of
a medium, in particular a pH sensor. The semi conductor sensor has an electronic …

Pearton et al.,“GaN-based diodes and transistors for chemical, gas, biological and pressure
sensing.” J. Phys. Condensed Matter, 2004, pp. R961-R994, 16, IOP Publishing Ltd, UK …

An apparatus and method for detecting selected chemical compounds or elements is
presented. A sensor array is exposed to one or more odors, for example. The outputs of the …

A gas sensor for measuring a concentration of carbon dioxide in a gas environment (GE) is
provided. The gas sensor includes a graphene layer having a side facing towards the gas …

The present disclosure provides a bio-field effect transistor (BioFET) and a method of
fabricating a BioFET device. The method includes forming a BioFET using one or more pro …

Systems and methods are provided for packaging integrated circuit (IC) gas sensor Systems
that employ at least one gas sensor that is formed as part of an integrated circuit and …

Methods, systems, and devices for detecting an analyte are disclosed and described. In one
embodiment, a Metal Oxide Semiconductor (MOS) sensor pixel with a MOS active material is …