Experimental comparative results on the response to magnetic induction of lateral bipolar
dual-collector magnetotransistors with different distances between the emitter contact and …

In this paper a new highly sensitive lateral magnetotransistor (LMT) activated by an
orthogonal magnetic field is presented. The search to reduce magnetic response loss led to …

A lateral magnetotransistor (LMT) with asymmetric topology sensitive to the three directions
of the magnetic field and using only a pair of terminals is reported. The experimental results …

An approach to compensate the offset of lateral bipolar magnetotransistors (LMTs) is
presented. The method is based on the use of the response of LMTs to a common mode …

The influence of mechanical stresses upon the offset of merged lateral bipolar
magnetotransistors (LMTs) is studied. The experimental setup for analyzing the response of …

A device for detecting a magnetic field, eg, a magnetic field meter and an ammeter are
described, the device having a first lateral magnetotransistor and a second lateral …

An approach to simulating circuits comprising magnetotransistors (MTs) is presented. A well-
characterized reference circuit forms part of the model. Simulation is performed through …

In this paper, PSPICE modelling of self-heating effects on the time response of electronic
processing lateral bipolar magneto-transistor (LMT) circuits are covered. The self-heating …

An integrated differential structure based on plane silicon magnetic sensitivity transistors
(PSMSTs) is proposed in this paper. It contains two PSMSTs with opposite magnetic …

This paper presents the effect of base width and implantation dose on electrical carriers in
the magnetotransistor deflected by the Lorentz force (FL) from magnetic field. The structure …