WARM: Improving NAND flash memory lifetime with write-hotness aware retention management
Increased NAND flash memory density has come at the cost of lifetime reductions. Flash
lifetime can be extended by relaxing internal data retention time, the duration for which a …
lifetime can be extended by relaxing internal data retention time, the duration for which a …
Codes correcting erasures and deletions for rank modulation
Error-correcting codes for permutations have received considerable attention in the past few
years, especially in applications of the rank modulation scheme for flash memories. While …
years, especially in applications of the rank modulation scheme for flash memories. While …
Codes correcting a burst of deletions for permutations and multi-permutations
H Han, J Mu, X Jiao, YC He - IEEE Communications Letters, 2018 - ieeexplore.ieee.org
Codes over permutations and multi-permutations have been recently proposed for efficiently
storing data in flash memories. Based on the interleaving techniques for permutations, we …
storing data in flash memories. Based on the interleaving techniques for permutations, we …
Rate-improved permutation codes for correcting a single burst of deletions
H Han, J Mu, YC He, X Jiao… - IEEE Communications …, 2020 - ieeexplore.ieee.org
Permutation codes are widely studied due to their promising applications in flash memories.
Based on the theory of permutation groups and subgroups, two classes of permutation …
Based on the theory of permutation groups and subgroups, two classes of permutation …
Balanced codes for data retention of multi-level flash memories with fast page read
Flash memories use the amount of charge (eg, electrons) trapped in floating gate transistors
to represent data. Charge leakage will cause data retention problem by unidirectionally …
to represent data. Charge leakage will cause data retention problem by unidirectionally …
Multi-permutation codes correcting a single burst unstable deletions in flash memory
H Han, J Mu, YC He, X Jiao… - IEEE Communications …, 2020 - ieeexplore.ieee.org
Multi-permutation codes for rank modulation scheme have been recently proposed for
efficiently storing data in flash memories. In this letter, we investigate the problem of a single …
efficiently storing data in flash memories. In this letter, we investigate the problem of a single …
Data archiving in 1x-nm NAND flash memories: Enabling long-term storage using rank modulation and scrubbing
The challenge of using inexpensive and high-density NAND flash for archival storage was
posed recently for reducing data center costs. However, such flash memory is becoming …
posed recently for reducing data center costs. However, such flash memory is becoming …
Reliability and hardware implementation of rank modulation flash memory
We review a novel data representation scheme for NAND flash memory named rank
modulation (RM), and discuss its hardware implementation. We show that under the normal …
modulation (RM), and discuss its hardware implementation. We show that under the normal …
Multi-permutation codes correcting a single burst unstable erasure
J Mu, H Han, YC He, X Zhang… - IEEE Communications …, 2019 - ieeexplore.ieee.org
Error-correcting codes on permutations and multi-permutations have recently attracted much
attention for their applications in flash memories through rank modulation. We propose a …
attention for their applications in flash memories through rank modulation. We propose a …