Ultraviolet and visible photo-response of transparent conductive Al-doped ZnO (AZO)/n-Silicon isotype heterojunction device

BC Şakar, Z Orhan, F Yıldırım… - Journal of Physics D …, 2022 - iopscience.iop.org
In this work, the electrical and photoresponse measurements of a transparent conductive Al-
doped ZnO (AZO)/n-Si heterojunction device were conducted in visible light and UV …

Optical properties of Cauliflower-like Bi2O3 nanostructures by reactive pulsed laser deposition (PLD) technique

ET Salim, Y Al-Douri, MS Al Wazny, MA Fakhri - Solar Energy, 2014 - Elsevier
Cauliflower-like Bi 2 O 3 nanostructures was prepared using pulsed laser deposition (PLD)
at different oxygen pressure. Atomic force microscopy (AFM) has revealed nanostructured …

Production and photovoltaic characterisation of n-Si/p-CZTS heterojunction solar cells based on a CZTS ultrathin active layers

SY Gezgin, A Houimi, HŞ Kılıç - Optik, 2019 - Elsevier
In this study, Au/n-Si/p-CZTS/Ag solar cells have been produced by using PLD technique.
Ultrathin CZTS films have been grown on n-Si wafer in different thicknesses depending on …

Relationship between the photoluminescence and conductivity of undoped ZnO thin films grown with various oxygen pressures

CF Yu, CW Sung, SH Chen, SJ Sun - Applied surface science, 2009 - Elsevier
The pulsed laser deposition (PLD) technique is used to deposit undoped ZnO thin films on
glass substrates at 150° C with different oxygen pressures of 40, 80, 100 and 150mTorr. X …

Photoluminescence and photoelectrochemical properties of the spray deposited copper doped zinc oxide thin films

NL Tarwal, KV Gurav, SH Mujawar, SB Sadale… - Ceramics …, 2014 - Elsevier
Copper incorporated zinc oxide (Cusingle bond ZnO) thin films were synthesized onto the
glass and tin doped indium oxide (ITO) coated glass substrates at 450° C by simple and cost …

Preparation of n-ZnO/p-Si solar cells by oxidation of zinc nanoparticles: effect of oxidation temperature on the photovoltaic properties

RA Ismail, SMH Al-Jawad, N Hussein - Applied Physics A, 2014 - Springer
In this study, n-ZnO/p-Si solar cells were fabricated by spraying ZnO nanoparticles (NPs) film
synthesised by dissolving of high purity zinc in hydrogen peroxide H 2 O 2 followed by …

Influence of the grain boundary barrier height on the electrical properties of Gallium doped ZnO thin films

CF Yu, SH Chen, SJ Sun, H Chou - Applied Surface Science, 2011 - Elsevier
The pulsed laser deposition (PLD) technique is used to deposit Gallium doped zinc oxide
(GZO) thin films on glass substrates at 250 with different Gallium (Ga) doping concentration …

The work function of n-ZnO deduced from heterojunctions with Si prepared by ALD

V Quemener, M Alnes, L Vines, P Rauwel… - Journal of Physics D …, 2012 - iopscience.iop.org
Highly doped n-type ZnO films have been grown on n-type and p-type Si substrates by
atomic layer deposition (ALD). Transmission electron microscopy shows columnar growth of …

Design analysis of heterojunction solar cells with aligned AZO nanorods embedded in p-type Si wafer

JR Sharma, G Das, AB Roy, S Bose, S Mukhopadhyay - Silicon, 2020 - Springer
Higher price-per-watt of silicon (Si) solar cells is still the main bottleneck in their widespread
use for power generation due to their expensive manufacturing process. The n-type zinc …

Studies on fabrication and characterization of a high-performance Al-doped ZnO/n-Si (1 1 1) heterojunction photodetector

RA Ismail, A Al-Naimi, AA Al-Ani - Semiconductor science and …, 2008 - iopscience.iop.org
Abstract ZnO: Al/c-Si (1 1 1) isotype heterojunction photodetectors were fabricated by a
chemical spray pyrolysis technique. High responsivity and good junction characteristics …