Si nanomebranes: Material properties and applications

A Sarkar, Y Lee, JH Ahn - Nano Research, 2021 - Springer
Silicon (Si) has widely been used as an essential material in the modern semiconductor
industry. Recently, new attempts have been actively made to apply Si to a variety of fields …

Enhanced subband light emission from Si quantum dots/SiO2 multilayers via phosphorus and boron co-doping

D Li, J Chen, T Sun, Y Zhang, J Xu, W Li, K Chen - Optics Express, 2022 - opg.optica.org
Seeking light sources from Si-based materials with an emission wavelength meeting the
requirements of optical telecommunication is a challenge nowadays. It was found that the …

Rational Doping Strategy to Build the First Solution‐Processed p‐n Homojunction Architecture toward Silicon Quantum Dot Photodetectors

B Ghosh, H Yamada, K Nemoto, W Jevasuwan… - Small …, 2024 - Wiley Online Library
Semiconductor p‐n homojunction is a requisite building block of operating transistors and
diodes which make up the modern electronic circuits and optoelectronic applications …

MIS-like structures with silicon-rich oxide films obtained by HFCVD: Their response as photodetectors

GO Mendoza Conde, JA Luna López… - Sensors, 2022 - mdpi.com
MIS-type structures composed of silicon-rich oxide (SRO), thin films deposited by hot
filament chemical vapor deposition (HFCVD), show interesting IV and It properties under …

Progress in group-IV semiconductor nanowires based photonic devices

S Singh, S Das, SK Ray - Applied Physics A, 2023 - Springer
Despite the dominance in consumer electronics, the use of group-IV semiconductors and
their heterostructures is still limited for photonic devices, attributed to the poor emission …

Enhanced Electroluminescence from a Silicon Nanocrystal/Silicon Carbide Multilayer Light-Emitting Diode

T Sun, D Li, J Chen, Y Wang, J Han, T Zhu, W Li, J Xu… - Nanomaterials, 2023 - mdpi.com
Developing high-performance Si-based light-emitting devices is the key step to realizing all-
Si-based optical telecommunication. Usually, silica (SiO2) as the host matrix is used to …

Controlling photoluminescence of silicon quantum dots using pristine-nanostates formation

H Ahn, J Jeong, M Gu, YJ Chang, M Han - Optical Materials, 2024 - Elsevier
This study investigates the effective control of photoluminescence (PL) of silicon
nanocrystals (Si–NCs) embedded in a SiO 2 matrix, with a specific focus on tuning the …

Achieving white electroluminescence and low current consumption in devices based on graphene oxide and silicon

GOM Conde, JAL López, ZJH Simón, JC López… - Materials Science in …, 2024 - Elsevier
This work reports the emission of white electroluminescence (EL) in devices based on
silicon. These devices are formed by a heterostructure of porous silicon (PSi), graphene …

High conductivity characteristics of phosphorus-doped nanocrystalline silicon thin films by KrF pulsed excimer laser irradiation method

X Wang, C Song, B Xu, H Yang - RSC advances, 2024 - pubs.rsc.org
The microstructure and high conductivity properties of phosphorus-doped nanocrystalline
silicon films were investigated on samples prepared by a plasma-enhanced chemical vapor …

Room-temperature infrared photoluminescence and broadband photodetection characteristics of Ge/GeSi islands on silicon-on-insulator

S Singh, JW John, A Sarkar, V Dhyani, S Das… - …, 2024 - iopscience.iop.org
In this study, molecular beam epitaxial growth of strain-driven three-dimensional self-
assembled Ge/GeSi islands on silicon-on-insulator (SOI) substrates, along with their optical …