Charge noise in the host semiconductor degrades the performance of spin-qubits and poses
an obstacle to control large quantum processors. However, it is challenging to engineer the …

The misfit dislocation formation related to plastic strain relaxation in Si or Ge quantum well
layers in SiGe heterostructures for spin qubits tends to negatively affect the qubit behaviors …

Si/SiGe heterostructures are of high interest for high-mobility transistor and qubit
applications, specifically for operations below 4.2 K. In order to optimize parameters such as …

The lattice strain induced by metallic electrodes can impair the functionality of advanced
quantum devices operating with electron or hole spins. Here, we investigate the deformation …

The performance and scalability of silicon spin qubits depend directly on the value of the
conduction band valley splitting (VS). In this work, we investigate the influence of …

The valley splitting (VS) of a silicon quantum dot plays an important role for the performance
and scalability of silicon spin qubits. In this paper we investigate the VS of a SiGe/Si/SiGe …

Isotopically enriched 28 Si quantum well layers in SiGe/Si/SiGe heterostructures are an
excellent material platform for electron spin qubits. In this work, we report the fabrication of …

The epitaxial growth of a strained Ge layer, which is a promising candidate for the channel
material of a hole spin qubit, has been demonstrated on 300 mm Si wafers using …

Solid‐state‐based quantum technologies, such as electronic spin‐qubits, constitute a
leading approach to the realization of quantum computation. Electronic spin‐qubits hosted …

This research investigates multibit ferroelectric FinFET (Fe-FinFET) utilizing SiGe/Si
heterostructure superlattice (SL) channel. The SiGe/Si SL multibit Fe-FinFET exhibits a …