Spintronic devices for high-density memory and neuromorphic computing–A review

BJ Chen, M Zeng, KH Khoo, D Das, X Fong, S Fukami… - Materials Today, 2023 - Elsevier
Spintronics is a growing research field that focuses on exploring materials and devices that
take advantage of the electron's “spin” to go beyond charge based devices. The most …

Spin-orbit torque assisted magnetization reversal of 100 nm-long vertical pillar

S Honda, Y Sonobe - Journal of Physics D: Applied Physics, 2022 - iopscience.iop.org
Long vertical pillars, with a width of the order of nanometers and with perpendicular shape
anisotropy (PSA), have high thermal stability. The advantage of using longer pillars is that …

Development of Ultra-thin CoPt Films with Electrodeposition for Three-dimensional Domain Wall Motion Memory

T Huang, Y Takamura, M Saito… - IEEE Transactions …, 2023 - ieeexplore.ieee.org
The authors developed the electrodeposition technique for CoPt thin films applicable to 3-D
domain wall motion memory (3D-DWMM). CoPt films with perpendicular magnetic …

Magnetization reversal via domain wall motion in vertical high-aspect-ratio nanopillar with two magnetic junctions

S Honda, Y Sonobe - Journal of Physics D: Applied Physics, 2024 - iopscience.iop.org
A vertical ferromagnetic (FM) nanopillar can be used as magnetic memory owing to
characteristics such as its high storage capacity and high thermal stability. The …

High thermal stability and low driven current achieved by vertical domain wall motion memory with artificial ferromagnet

YM Hung, Y Shiota, R Hisatomi… - Applied Physics …, 2021 - iopscience.iop.org
To enhance thermal stability while keeping low driven current is difficult in traditional domain
wall (DW) motion devices. The increasing of energy barrier for thermal stability inevitably …

Optimizing preparation conditions and characterizing for CoxPt1-x alloy cylindrical nanowires fabricated by electrodeposition on nanoporous polycarbonate …

N Oguchi, M Saito, T Homma, T Kato, T Ono… - Journal of Magnetism …, 2024 - Elsevier
This study investigated the influence of the preparation conditions on the Co composition,
crystal structure, and magnetic and electric conduction properties of cylindrical Co x Pt 1-x …

Single current control of magnetization in vertical high-aspect-ratio nanopillars on in-plane magnetization layers

S Honda, Y Sonobe - Journal of Physics D: Applied Physics, 2024 - iopscience.iop.org
Ferromagnetic pillars standing on a substrate hold promise for use in recording segments of
multibit nonvolatile memories. These pillars exhibit high thermal stability in their …

Efficiency of Spin-Transfer Torque Assisted Spin-Orbit Torque Magnetization Switching under In-plane External Field Application

D Pan, D Oshima, T Kato - IEEE Transactions on Magnetics, 2024 - ieeexplore.ieee.org
We have simulated the magnetization dynamics under implementing spin-transfer torque
(STT) and spin-orbit torque (SOT) simultaneously, which is regarded as the writing process …

[HTML][HTML] Ultra-thin interfacial domain wall less than 1 nm based on TbxCo100− x/Cu/[Co/Pt] 2 heterostructures for multi-level magnetic pillar memory

S Ranjbar, S Sumi, K Tanabe, H Awano - AIP Advances, 2021 - pubs.aip.org
We propose a new pillar type of multi-level memory with Tb x Co 100− x/Cu/[Co/Pt] 2
heterostructures to achieve high storage density and controllable domain wall position in …

Influence of Stray Field on Magnetization Switching Induced by Spin-Orbit Torque

F Ye, H Jang, Y Shiota, H Narita, R Hisatomi… - Journal of the …, 2024 - jstage.jst.go.jp
In a vertical domain wall motion memory with artificial ferromagnets, magnetization switching
induced by spinorbit torque (SOT) is employed for the data-writing method. This data-writing …