PTN Kishore, SK Pramanick… - IEEE Transactions on …, 2024 - ieeexplore.ieee.org
The low Short Circuit Withstand Time (SCWT) offered by GaN HEMTs imposes challenges on their reliability, especially in medium to high power applications such as electric vehicle …
Temperature is a critical parameter for the GaN HEMT as it sharply impacts the electrical characteristics of the device more than for SiC or Si MOSFETs. Either when designing a …
Gallium Nitride (GaN) transistors are gaining popularity in industrial and automotive applications due to their ability to achieve high power density and higher efficiency …
Abstract The Short-Circuit (SC) robustness of GaN HEMTs represents a relevant issue for their use in power electronics. The research only focused on type I SC behavior of the single …
N Zanatta, IDT Caldognetto, D Biadene… - Proceedings of SIE …, 2023 - books.google.com
The article introduces an extremum seeking control (ESC) technique for determining the optimal operating points of a multi-stage converter named twin-bus buck converter (TBB)[8] …