SrRuO 3 is endowed with three remarkable features. First, it is a moderately correlated
material that exhibits several novel physical properties; second, it permits the epitaxial …

Ferroelectric oxide materials have offered a tantalizing potential for applications since the
discovery of ferroelectric perovskites more than 50 years ago. Their switchable electric …

Continuous advancement in nonvolatile and morphotropic beyond-Moore electronic devices
requires integration of ferroelectric and semiconductor materials. The emergence of hafnium …

The integration of ferroelectric oxide films into microelectronic devices,, combined with the
size reduction constraints imposed by the semiconductor industry, have revived interest in …

With much excitement and great enthusiasm I introduce this thorough treatise on the major
aspects of domain and domain wall phenomena in ferroics, mostly ferroelectrics, a major …

Bulk ferroelectrics undergo structural phase transformations at low temperatures, giving
multi-stable (that is, multiple-minimum) degenerate states with spontaneous polarization …

Semiconducting field-effect transistors are the workhorses of the modern electronics era.
Recently, application of the field-effect approach to compounds other than semiconductors …

Abstract Experimental,,,,,, and theoretical, investigations have demonstrated that a quasi-two-
dimensional electron gas (q-2DEG) can form at the interface between two insulators: non …

Ferroelectric switching and nanoscale domain dynamics were investigated using atomic
force microscopy on monocrystalline P b (Z r 0.2 T i 0.8) O 3 thin films. Measurements of …

The development of interface-based magnetoelectric devices necessitates an
understanding of polarization-mediated electronic phenomena and atomistic polarization …