Two-Dimensional (2D) materials have been a “beyond CMOS” focus for more than a decade
now, and we are on the verge of a variety of breakthroughs in the science to enable their …

The effect of γ-irradiation, concentration of Eu 2+ ions, cationic substitution of components
(Ga→ Al) on photoluminescence (PL) of Ca (Al x Ga 1-x) 2 S 4: Eu 2+ solid solutions was …

The solid solutions of Ca x Ba 1− x Ga 2 S 4 (x= 0, 0. 1,…, 1) were synthesized by solid-
phase reactions from powder components of CaS, BaS, and Ga2S3. The temperature …

Cu2Te single crystal was grown by the Bridgman method. X-ray diffraction (XRD) study of
Cu2Te single crystals in the temperature range of 293–893 K was performed and possible …

The dependences of the kinetic coefficients, namely, the Hall coefficient, electrical
conductivity, and charge carrier mobility on the temperature, electric field strength, and …

Abstract Сa 0.5 Ва 0.5 Ga 2 S 4 solid solutions activated by Ce 3+ and Sm 3+ ions have
been synthesized by solid state reaction and photoluminescence (PL) properties are …

The temperature dependences of physical parameters (the conductivity and the Hall
constant) are experimentally investigated for pure indium-selenide (n-InSe) crystals and …

In this study, we experimentally study the dependence of the intensity of laser radiation
incident on and transmitted through a layered InSe crystal. A picosecond YAG: Nd3+ laser …

The concentrations of forming defects during phase transitions (PTs) and elastic coefficients
in the Cu 1. 9 5 Ni 0. 0 5 S compound were determined based on differential thermal …

Photoluminescence properties of Ca 4 Ga 2 S 7: Eu 2+ chalcogenide semiconductors have
been studied under the impulse laser excitation in the range of 10–105 W/cm2 at room …