[HTML][HTML] Defects in Ge and GeSn and their impact on optoelectronic properties
A Giunto, A Fontcuberta i Morral - Applied Physics Reviews, 2024 - pubs.aip.org
GeSn has emerged as a promising semiconductor with optoelectronic functionality in the
mid-infrared, with the potential of replacing expensive III–V technology for monolithic on-chip …
mid-infrared, with the potential of replacing expensive III–V technology for monolithic on-chip …
Quantitative correlation study of dislocation generation, strain relief, and Sn outdiffusion in thermally annealed GeSn epilayers
The instability during the growth and processing of epitaxial GeSn layers with high Sn molar
fraction and high compressive strain is still to be fully studied. In this work, the relationship …
fraction and high compressive strain is still to be fully studied. In this work, the relationship …
Full Picture of Lattice Deformation in a Ge1 − xSnx Micro‐Disk by 5D X‐ray Diffraction Microscopy
C Corley‐Wiciak, MH Zoellner… - Small …, 2024 - Wiley Online Library
Lattice strain in crystals can be exploited to effectively tune their physical properties. In
microscopic structures, experimental access to the full strain tensor with spatial resolution at …
microscopic structures, experimental access to the full strain tensor with spatial resolution at …
[HTML][HTML] Remote plasma-enhanced chemical vapor deposition of GeSn on Si: Material and defect characterization
Germanium–tin (GeSn) alloys at sufficiently high Sn concentration, above several atomic
percent, are the only group IV semiconductor exhibiting a direct bandgap and have …
percent, are the only group IV semiconductor exhibiting a direct bandgap and have …
Impact of Long-Term Annealing on Photoluminescence from Ge1−xSnx Alloys
We report on the connection between strain, composition, defect density and the
photoluminescence observed before and after annealing at 300° C for GeSn samples with …
photoluminescence observed before and after annealing at 300° C for GeSn samples with …
Impact of defects on photoexcited carrier relaxation dynamics in GeSn thin films
SV Kondratenko, SS Derenko, YI Mazur… - Journal of Physics …, 2020 - iopscience.iop.org
We report the results of a study that was conducted to investigate the recombination paths of
photoexcited charge carriers in GeSn thin films. The charge carrier lifetime was predicted as …
photoexcited charge carriers in GeSn thin films. The charge carrier lifetime was predicted as …
Influence of Mo concentration on the structural and electrochemical properties of double-doped Mo–Co–Ni 3 S 2/NF composites
Developing non-precious, stable, and highly efficient electrocatalyst materials is crucial for
large-scale practical HER applications. Ni3S2 is a prominent catalyst due to its high …
large-scale practical HER applications. Ni3S2 is a prominent catalyst due to its high …
[HTML][HTML] Epitaxial twin coupled microstructure in GeSn films prepared by remote plasma enhanced chemical vapor deposition
Growth of GeSn films directly on Si substrates is desirable for integrated photonics
applications since the absence of an intervening buffer layer simplifies device fabrication …
applications since the absence of an intervening buffer layer simplifies device fabrication …
Algorithm based high composition-controlled growths of GeSn on GaAs (001) via molecular beam epitaxy
The growth of high-composition GeSn films of the future will likely be guided via algorithms.
In this study we show how a logarithmic-based algorithm can be used to obtain GeSn …
In this study we show how a logarithmic-based algorithm can be used to obtain GeSn …
Investigation of the cap layer for improved GeSn multiple quantum well laser performance
The study of all-group-IV SiGeSn lasers has opened a new avenue to Si-based light
sources. SiGeSn heterostructure and quantum well lasers have been successfully …
sources. SiGeSn heterostructure and quantum well lasers have been successfully …