InGaN-based red micro-size light-emitting diodes (μLEDs) have become very attractive.
Compared to common AlInGaP-based red µLEDs, the external quantum efficiency (EQE) of …

With the advent of technologies such as augmented/virtual reality (AR/VR) that are moving
towards displays with high efficiency, small size, and ultrahigh resolution, the development …

Significant efforts are being put into the development of efficient micrometer-scale light
emitting diodes (LEDs) for future display technologies due to their marked benefits over …

In this study, we present a high-efficiency InGaN red micro-LED fabricated by the
incorporation of superlattice structure, atomic layer deposition passivation, and a distributed …

InGaN red light emitting diode (LED) is one of the crucial bottlenecks that must be broken
through to realize high‐resolution full‐color mini/micro‐LED displays. The efficiency of …

We demonstrate a significant quantum efficiency enhancement of InGaN red micro-light-
emitting diodes (μLEDs). The peak external quantum efficiency (EQE) of the packaged 80× …

Here, we report highly efficient InGaN-based red light-emitting diodes (LEDs) grown on
conventional c-plane-patterned sapphire substrates. An InGaN single quantum well active …

Micro or submicron scale light-emitting diodes (µLEDs) have been extensively studied
recently as the next-generation display technology. It is desired that µLEDs exhibit high …

Abstract Eu-doped Gallium nitride (GaN) is a promising candidate for GaN-based red light-
emitting diodes, which are needed for future micro-display technologies. Introducing a …

The microdisplays for augmented reality and virtual reality require ultrasmall micro light-
emitting-diodes (μLEDs) with a dimension of≤ 5 μm. Furthermore, the microdisplays also …