Spin-transfer torque magnetoresistive random access memory (STT-MRAM) is a non-volatile
memory technology with a unique combination of speed, endurance, density and ease of …

Due to the separate memory and computation units in traditional Von-Neumann architecture,
massive data transfer dominates the overall computing system's power and latency, known …

While magnetoresistive random-access memory (MRAM) stands out as a leading candidate
for embedded nonvolatile memory and last-level cache applications, its endurance is …

SAS-MRAM has been proposed as a potential last-level cache SRAM replacement owing to
its high speed (~ 1 ns), high cell density, and high endurance characteristics. Here, we …

This article explores an area saving scheme for spin–orbit torque (SOT) magnetic random
access memory (MRAM) by sharing the SOT channel and write transistor among multiple …

The domain wall-magnetic tunnel junction (DW-MTJ) is a versatile device that can
simultaneously store data and perform computations. These three-terminal devices are …

For the development of high-capacity spin-orbit torque (SOT) magnetic memory, a giant
magnetoresistive (GMR) device with perpendicularly magnetized Co/Pd memory layer was …

Energy-efficient computing is essential for addressing the rising power demands of modern
data-intensive applications and ensuring sustainable technology advancement …

Spin-orbit torque (SOT) devices are being pursued for various memory and in-memory
compute applications. At nanoscale dimensions, electric current flowing through the SOT …

As the capabilities of consumer electronics grow, so too does the need for low-energy, low-
cost, and process-compatible embedded non-volatile memory (NVM). Resistive RAM …