Planar vs Non-Planar Orientation in AuAg-Catalyzed InP Nanowire Growth

M Zavarize, NV Sibirev, Y Berdnikov… - Crystal Growth & …, 2023 - ACS Publications
Nanowire integration into current processing technologies remains an important challenge
regarding scalable device fabrication, particularly for metal-catalyzed III–V nanowires …

Epitaxial CuInSe2 thin films grown by molecular beam epitaxy and migration enhanced epitaxy

K Abderrafi, R Ribeiro-Andrade, N Nicoara… - Journal of Crystal …, 2017 - Elsevier
While CuInSe 2 chalcopyrite materials are mainly used in their polycrystalline form to
prepare thin film solar cells, epitaxial layers have been used for the characterization of …

In-assisted deoxidation of GaAs substrates for the growth of single InAs/GaAs quantum dot emitters

T Xia, YJ Cho, M Cotrufo, I Agafonov… - Semiconductor …, 2015 - iopscience.iop.org
We report a systematic study of the In-assisted deoxidation (IAD) of epitaxial GaAs (100)
substrates. Optimized IAD conditions resulting in a pit-free and smooth GaAs surface are …

[图书][B] Molecular beam epitaxy and magnetotransport studies of thin films of the topological semimetal cadmium arsenide

M Goyal - 2020 - search.proquest.com
Cd 3 As 2 is a three-dimensional Dirac semimetal. Electrons in Cd 3 As 2 behave like
massless particles known as Dirac fermions. Their linear dispersion in momentum space …

Molecular beam epitaxy growth and characterization of CdTe heterostructures on GaAs-effect of interface, growth, and annealing conditions to crystal quality

O Arı - 2017 - search.proquest.com
Highly crystalline CdTe structures are desired for solar cells, x-ray detectors, electro-optical
modulators, and especially in Hg1-xCdxTe infra-red detectors. Epitaxial growth of Hg 1-x Cd …