Monolithic integration of optoelectronics with electronics is a much-desired functionality.
Here, we demonstrate that it is possible to realize low-loss Ge quantum-well photonic …

Germanium/Silicon-Germanium (Ge/SiGe) multiple quantum wells receive great attention for
the realization of Si-based optical modulators, photodetectors, and light emitters for short …

We report on high speed operation of a Ge/SiGe multiple quantum well (MQW) electro-
absorption modulator in a waveguide configuration. 23 GHz bandwidth is experimentally …

The ever-increasing demand for integrated, low power interconnect systems is pushing the
bandwidth density of CMOS photonic devices. Taking advantage of the strong Franz …

We present a systematic experimental study of the linear and nonlinear optical properties of
silicon-germanium (SiGe) waveguides, conducted on samples of varying cross-sectional …

We report on photo-detectors consisting of an optical waveguide that incorporates a
resonant tunneling diode (RTD). Operating at wavelengths around 1.55 μ m in the optical …

Strained germanium nanowires have recently become an important material of choice for
silicon-compatible optoelectronic devices. While the indirect bandgap nature of germanium …

Despite the vast knowledge accumulated on silicon, germanium, and their alloys, these
materials still demand research, eminently in view of the improvement of knowledge on …

We demonstrate electroabsorption contrast greater than 5 dB over the entire
telecommunication S-and C-bands with only 1V drive using a new Ge/SiGe QW epitaxy …

Monolayer transition-metal dichalcogenide (TMDC) semiconductors host strongly bound two-
dimensional excitonic complexes, and form an excellent platform for probing many-body …