The radiation hardness of silicon carbide with respect to electron and proton irradiation and
its dependence on the irradiation temperature are analyzed. It is shown that the main …

Abstract Silicon Carbide (SiC) Metal-Oxide-Semiconductor Field-Effect Transistors
(MOSFETs) have gained significant attention due to their ability to achieve lower on …

In this work, the gamma ray radiation-induced total ionizing dose (TID) effects in SiC power
MOSFETs are investigated. The transistor characteristics, such as transfer curve, output …

An analytical model for predicting the proton and neutron radiation-induced carrier removal
in silicon carbide (4H–SiC) diodes, is developed. It is primarily aimed towards a fast …

In this article, we proposed a comprehensive model for predicting the degradation of SiC
MOSFETs after gamma-ray irradiation. It is experimentally founded that SiC MOSFETs …

The different effect of displacement damage produced by neutron irradiation on the static
characteristics of 4.5-kV silicon and 4H silicon carbide (SiC) pin power diodes is explained …

SiC MOSFETs are increasingly gaining attentions from aerospace industry due to their
superior radiation tolerance and low loss. The influences of total ionizing dose (TID) …

Total-ionizing dose (TID) and displacement damage (DD) are investigated in SiC power
MOSFETs at ultrahigh doses with 10-keV X-ray and 3-MeV protons. Significant parametric …

Radiation-induced leakage current degradations for SiC power MOSFETs are investigated
by 181 Ta ion irradiation. An ion flux-related leakage degradation is reported for the first …

The effect of high-temperature irradiation with 15 MeV protons on the parameters of high-
voltage 4H-SiC Schottky diodes has been studied at irradiation temperatures of 23–500° C …