Electromagnetic phenomena, such as magnetization switching, are guided by parity and
time-reversal symmetries. Magnetic field and magnetization are time-odd axial vectors …

The interfacial Dzyaloshinskii-Moriya interaction (DMI) has long been observed in normal
metal/ferromagnetic multilayers, enabling the formation of chiral domain walls, skyrmions …

It is crucial to realize field-free deterministic current-induced switching in spin-orbit-torque
magnetic random-access memory with perpendicular magnetic anisotropy (PMA). A …

Current induced spin-orbit torque (SOT) holds great promise for next generation magnetic-
memory technology. Field-free SOT switching of perpendicular magnetization requires the …

The emergence of embedded magnetic random-access memory (MRAM) and its integration
in mainstream semiconductor manufacturing technology have created an unprecedented …

Antiferromagnetic (AFM) materials are a pathway to spintronic memory and computing
devices with unprecedented speed, energy efficiency, and bit density. Realizing this …

Spin-orbit torques (SOTs) provide an energy-efficient approach for the electrical
manipulation of magnetization, pivotal for next-generation information storage and …

Current‐induced spin‐orbit torques (SOTs) have emerged as a powerful tool to control
magnetic elements and non‐uniform magnetic textures such as domain walls and …

To reveal the role of chirality on field-free spin–orbit torque (SOT) induced magnetization
switching, we propose an existence of z-torque through the formation of noncollinear spin …

Current-induced magnetization switching by spin-orbit torque (SOT) is of great importance
for the energy-efficient operation of spin-based memory and logic devices. However, the …